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NCE80T420D-VB Product details
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Still troubled by high heat generation and insufficient reliability in high-voltage systems? The VBsemi NCE80T420D-VB is here to solve your problems! This N-MOSFET in a TO263 package adopts advanced SJ_Multi-EPI superjunction technology, offering a high voltage tolerance of 800V and a continuous drain current of 11A, with an on-resistance of only 500mΩ (@10V), maintaining extremely low losses in high-voltage switching scenarios. With a wide gate drive range of ±30V, it easily adapts to various high-voltage power supplies, inverters, and industrial drive applications, serving as a "reliable cornerstone" for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 11A | 500(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Voltage Rating: 800V (Ample margin for high-voltage systems, safe and stable)
- Drive Range: ±30V (Compatible with various gate drive schemes)
- Threshold Voltage: 3.5V (Typical, facilitating design prediction)
- On-Resistance: 500mΩ @ 10V (Super-junction technology, low conduction losses)
- High Current Capability: 11A (Maintains strong output under high voltage)
- Package: TO263 (Suitable for industrial-grade power applications, excellent thermal performance)
- Technology: SJ_Multi-EPI (Super-junction multi-epitaxial process, excellent switching characteristics and voltage withstand performance)
- Drive Range: ±30V (Compatible with various gate drive schemes)
- Threshold Voltage: 3.5V (Typical, facilitating design prediction)
- On-Resistance: 500mΩ @ 10V (Super-junction technology, low conduction losses)
- High Current Capability: 11A (Maintains strong output under high voltage)
- Package: TO263 (Suitable for industrial-grade power applications, excellent thermal performance)
- Technology: SJ_Multi-EPI (Super-junction multi-epitaxial process, excellent switching characteristics and voltage withstand performance)
Domain and module applications：
– High-Frequency, High-Voltage Scenarios, One Solution- Switching Power Supplies: Main switch for high-voltage DC-DC, AC-DC, higher efficiency, lower temperature rise
- Photovoltaic Inverters: MPPT and inverter bridge circuits, stable and reliable, supporting green energy
- Industrial Motor Drives: High-voltage motor control, impact-resistant, adaptable to harsh environments
- Electric Vehicle Chargers: High-voltage side power conversion, improving overall power density
- UPS Uninterruptible Power Supplies: Protects critical loads, fast switching, low losses
- High-Voltage LED Drivers: Constant voltage/constant current control, simplifying circuit design
- Auxiliary Power Supplies and PFC: Active power factor correction, reducing harmonic interferenceNCE80T420D-VB – High-voltage super junction, high efficiency, low loss, making your power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
