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NCEP048NH100D-VB Product details
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Still troubled by low efficiency and severe heat generation in high-current power conversion? Let VBsemi NCEP048NH100D-VB solve your worries! This TO263-packaged N-MOS transistor, with advanced SGT process, achieves an ultra-low on-resistance of 3.2mΩ and can carry 180A current, with extremely low conduction loss and significantly reduced heat generation. The 100V voltage rating combined with excellent switching performance widely covers high-voltage, high-power scenarios such as power supplies, motor drives, and automotive systems, making it a "hardcore tool" for power electronics designers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | 3.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Voltage Rating: 100V (high-voltage application, ample margin)
- Drive Range: ±20V (compatible with various gate drive voltages)
- Turn-On Threshold: 3V (standard logic level, easy to drive)
- Ultra-Low On-Resistance: 3.2mΩ @ 10V (extremely low conduction loss, high efficiency)
- High Current Capability: 180A (superb current handling, for heavy load scenarios)
- Package: TO263 (excellent heat dissipation, suitable for high-power surface mount)
- Technology: SGT (Shielded Gate Trench, low switching loss, good EMI)
- Drive Range: ±20V (compatible with various gate drive voltages)
- Turn-On Threshold: 3V (standard logic level, easy to drive)
- Ultra-Low On-Resistance: 3.2mΩ @ 10V (extremely low conduction loss, high efficiency)
- High Current Capability: 180A (superb current handling, for heavy load scenarios)
- Package: TO263 (excellent heat dissipation, suitable for high-power surface mount)
- Technology: SGT (Shielded Gate Trench, low switching loss, good EMI)
Domain and module applications：
**Field and Module Applications — Six Typical Scenarios, One Chip Handles All**
- Switching Power Supplies: Efficient synchronous rectification, improves conversion efficiency, reduces temperature rise
- Motor Drives: High-power BLDC/PMSM control, smooth operation, strong overcurrent capability
- Energy Storage Systems: Battery charge/discharge management, excellent current handling, safe and reliable
- DC-DC Converters: High-voltage step-down/step-up solutions, enabling high power density modules
- Vehicle Power Supplies: 12V/24V electrical systems, vibration resistance, wide temperature range, stable and durable
- Industrial Control: High-current load switches, fast response, longer lifespan NCEP048NH100D-VB — Strong current, low loss, making high-voltage power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
