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NCEP038NH100D-VB Product details
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Still troubled by power loss and heat dissipation issues in high-current, high-voltage scenarios? Let VBsemi NCEP038NH100D-VB solve your worries! This TO263-packaged N-MOS transistor, using advanced SGT (Split Gate Trench) technology, has an on-resistance as low as 3.2mΩ while carrying a huge current of 180A, with far lower heat generation than competing products. The 100V voltage rating easily handles demanding applications such as industrial power supplies, motor drives, and automotive systems, making it an "efficiency weapon" for power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | 3.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 100V (high voltage margin, safe and reliable)
Drive Range: ±20V (compatible with 3.3V/5V/12V drive)
Turn-On Threshold: 3V (reliable turn-on with standard logic levels)
Ultra-Low On-Resistance: 3.2mΩ @ 10V (extremely low conduction loss)
High Current Capability: 180A (large package, high power)
Package: TO263 (suitable for high power density design, excellent heat dissipation)
Technology: SGT (Shielded Gate Trench process, low switching loss)
Drive Range: ±20V (compatible with 3.3V/5V/12V drive)
Turn-On Threshold: 3V (reliable turn-on with standard logic levels)
Ultra-Low On-Resistance: 3.2mΩ @ 10V (extremely low conduction loss)
High Current Capability: 180A (large package, high power)
Package: TO263 (suitable for high power density design, excellent heat dissipation)
Technology: SGT (Shielded Gate Trench process, low switching loss)
Domain and module applications：
— Six Hot Scenarios, One Chip Handles All
Industrial Power Supplies: High-voltage DC-DC, server power supplies, significant efficiency improvement
Motor Drives: Electric tools, drone ESCs, rapid response, ample torque
Vehicle Systems: Automotive electronics, auxiliary power supplies, vibration resistance, stable output over wide temperature range
Battery Protection: High-capacity lithium battery charge/discharge management, instant fault current interruption
Photovoltaic Inverters: MPPT boost, inverter bridge, strong current capability, low temperature rise
Power Conversion: Synchronous rectification, UPS, communication power supplies, facilitating module miniaturization and high efficiency NCEP038NH100D-VB — High current, low resistance, making your power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
