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NCEP039N10MD-VB Product details
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Imagine this: You are designing a high-power-density, high-current power module, where the PCB must carry hundreds of amperes of current while strictly controlling conduction loss and temperature rise. Ordinary MOSFETs either lack sufficient voltage tolerance or have high on-resistance, forcing a difficult trade-off between "performance" and "heat dissipation." VBsemi NCEP039N10MD-VB is designed precisely for this—it integrates 100V withstand voltage, 180A current carrying capability, and an on-resistance as low as 3.2mΩ into a TO263 package, enabling high-power switching designs without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | 3.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Drain-Source Voltage (VDS): 100V, covering 48V systems and multi-cell battery applications
- Gate-Source Voltage (VGS): ±20V, compatible with 5V~15V drive logic
- Threshold Voltage (Vth): 3V, clear switching characteristics, strong anti-interference capability
- On-Resistance (RDS(on)): 3.2mΩ (at VGS=10V), minimal power loss
- Maximum Drain Current (ID): 180A, excellent high-current handling capability
- Technology: SGT (Shielded Gate Trench), optimized switching speed and conduction performance
- Gate-Source Voltage (VGS): ±20V, compatible with 5V~15V drive logic
- Threshold Voltage (Vth): 3V, clear switching characteristics, strong anti-interference capability
- On-Resistance (RDS(on)): 3.2mΩ (at VGS=10V), minimal power loss
- Maximum Drain Current (ID): 180A, excellent high-current handling capability
- Technology: SGT (Shielded Gate Trench), optimized switching speed and conduction performance
Domain and module applications：
- **Motor Drive Modules** – Acts as a power switch, efficiently handling high-current commutation, significantly reducing heat generation, and improving driver reliability.
- **Power Tools/Garden Machinery** – Utilizes low on-resistance and high voltage withstand capability to achieve high power output and longer battery life.
- **Battery Protection Boards/Energy Storage Systems** – When overcurrent or short circuit is detected, the NCEP039N10MD-VB can quickly cut off the main circuit, protecting the battery pack.
- **DC-DC Converters/Synchronous Rectification** – Replaces ordinary MOSFETs in 100V class buck/boost topologies, improving conversion efficiency and reducing thermal design pressure.
- **Communication Base Station Power Supplies/Server Power Supplies** – Suitable for high-current rectification stages and power factor correction (PFC) circuits, stably handling high load surges.
- **Automotive Electronic Auxiliary Power Supplies** – Tolerates automotive voltage fluctuations, providing a reliable power path for various electric pumps, fans, and heaters. In a nutshell: The NCEP039N10MD-VB is not an ordinary MOSFET; it is the "power core" and "efficiency cornerstone" of your high-voltage, high-current power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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