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NCEP033N10D-VB Product details
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Still troubled by conduction loss and heat dissipation issues in high-current switching applications? Let VBsemi NCEP033N10D-VB help you! This TO263-packaged N-MOSFET, using advanced SGT (Shielded Gate Trench) technology, features an on-resistance of only 3.2mΩ while handling a continuous drain current of up to 180A, maintaining extremely low temperature rise in high-power scenarios. With 100V withstand voltage and a wide ±20V drive range, it easily meets the stringent requirements of industrial power supplies, motor drives, and automotive systems, serving as the "efficiency cornerstone" for high-performance power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | 3.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 100V (ample margin, safe and reliable)
Drive Range: ±20V (compatible with various gate drive circuits)
Threshold Voltage: 3V (clear threshold, stable switching characteristics)
Ultra-Low On-Resistance: 3.2mΩ @ 10V (extremely low conduction loss, significantly reduced heat generation)
High Current Capability: 180A (large package, high energy, handles high-power loads)
Package: TO263 (D2PAK, suitable for efficient heat dissipation in power circuits)
Technology: SGT (Shielded Gate Trench, fast switching speed, low figure of merit)
Drive Range: ±20V (compatible with various gate drive circuits)
Threshold Voltage: 3V (clear threshold, stable switching characteristics)
Ultra-Low On-Resistance: 3.2mΩ @ 10V (extremely low conduction loss, significantly reduced heat generation)
High Current Capability: 180A (large package, high energy, handles high-power loads)
Package: TO263 (D2PAK, suitable for efficient heat dissipation in power circuits)
Technology: SGT (Shielded Gate Trench, fast switching speed, low figure of merit)
Domain and module applications：
– Six High-Power Scenarios, One Chip to Handle Them All
Industrial Power Supplies: High-voltage DC-DC, server power supplies, balancing efficiency and reliability.
Motor Drives: Power tools, drone ESCs, handles high current output with ease.
Battery Protection: Energy storage systems, power batteries, instantaneously cuts off short-circuit fault current.
Automotive Auxiliary Systems: Automotive DC-DC, automotive electronic control units, stable operation over a wide temperature range.
Communication Base Station Power Supplies: 48V bus conversion, low losses contribute to green energy efficiency.
Photovoltaic Inverters: MPPT boost circuits, withstands high power input, stable and efficient. NCEP033N10D-VB – Ultra-low resistance, high-current champion, makes your power design effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
