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NCEP01T13AD-VB Product details
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Still struggling with conduction loss and heat dissipation issues in high-voltage, high-current applications? Let VBsemi NCEP01T13AD-VB solve your problems! This TO263-packaged single N-channel MOSFET, utilizing advanced SGT technology, offers 100V withstand voltage paired with an ultra-high current capability of 180A, and an on-resistance as low as 3.2mΩ, maintaining extremely low temperature rise even in high-power scenarios. The SGT process delivers faster switching speeds and better FOM values, significantly reducing switching losses, making it the "power core" for high-intensity applications such as server power supplies, motor drives, and energy storage systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | 3.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 100V (covers industrial and automotive-grade bus voltages)
Drive Range: ±20V (compatible with various gate drive schemes)
Threshold Voltage: 3V (stable threshold, strong noise immunity)
Ultra-Low On-Resistance: 3.2mΩ @ 10V (extremely low conduction loss, significantly reduced heat generation)
High Current Capability: 180A (meets high-power, high-load requirements)
Package: TO263 (excellent thermal performance, suitable for large bottom copper area)
Technology: SGT (Shielded Gate Trench, fast switching, low loss, high reliability)
Drive Range: ±20V (compatible with various gate drive schemes)
Threshold Voltage: 3V (stable threshold, strong noise immunity)
Ultra-Low On-Resistance: 3.2mΩ @ 10V (extremely low conduction loss, significantly reduced heat generation)
High Current Capability: 180A (meets high-power, high-load requirements)
Package: TO263 (excellent thermal performance, suitable for large bottom copper area)
Technology: SGT (Shielded Gate Trench, fast switching, low loss, high reliability)
Domain and module applications：
– Six High-Power Scenarios, One Chip to Solve Them All
Server and Communication Power Supplies: Efficient synchronous rectification improves overall conversion efficiency.
Energy Storage and Battery Protection: Reliable high-current switching safeguards system safety.
Power Tools and Motor Drives: High burst power output, fast speed response.
Automotive Power Supplies and DC-DC: Wide voltage margin adapts to harsh automotive environments.
UPS and Industrial Power Supplies: High reliability, low losses, stable operation under full load for extended periods.
Charging Stations and New Energy: Withstands high voltage and current surges, powering green energy. NCEP01T13AD-VB – Strong current, low losses, injects dynamic power into your high-power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
