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CRSS037N10N-VB Product details

Product introduction:

CRSS037N10N-VB is a Single N-MOSFET deeply optimized for high-power switching applications. The SGT process balances ultra-low conduction loss with high switching speed, and the TO263 package achieves a good balance between heat dissipation capability and ease of installation. The combination of 100V withstand voltage, 180A current carrying capacity, and 3.2mΩ on-resistance makes it a high-performance alternative to traditional D2PAK or multi-tube parallel solutions in server power supplies, industrial control, and new energy systems, especially suitable for applications requiring high current and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 3V 180A 3.2(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 3V 180A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 3V 180A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
VDS=100V: Suitable for 48V/72V/100V bus systems, providing ample voltage spike margin, significantly reducing avalanche breakdown risk.
VGS=±20V: Compatible with standard gate drive levels, can directly connect to PWM controllers or dedicated gate driver ICs, simplifying drive circuit design.
Vth=3V (Typical): Moderate threshold voltage, strong anti-interference capability, while ensuring full conduction region under 10V drive.
RDS(on)=3.2mΩ @ VGS=10V: Ultra-low on-resistance, extremely low conduction loss at full load, effectively reducing system temperature rise, allowing for smaller heatsinks.
ID=180A: Ample continuous current margin, meeting peak demands of high-power motors, battery charging/discharging, and power supply redundancy designs.
Package TO263: Low thermal resistance, strong current handling capability, compatible with standard SMT processes, suitable for high-current PCB layout and modular integration.
Technology SGT: Shielded gate structure optimizes Miller capacitance, significantly reduces switching losses, supports higher frequency operation, improving system efficiency.

Domain and module applications:


Decision Value Analysis
High-Power DC-DC Converters: Ultra-low on-resistance and low switching losses improve synchronous rectification efficiency, suitable for communication power supplies and server power modules.
Motor Drives and Inverters: 180A high current capability meets the drive requirements of industrial motors, power tools, and robot joints, with smoother PWM control.
Battery Protection and Charge/Discharge Management: Low internal resistance reduces self-heating of the protection board, and high voltage margin adapts to multi-series architectures of lithium battery packs and energy storage systems.
UPS and Backup Power: 100V voltage withstand combined with low conduction losses improves inverter efficiency and enhances system overcurrent and short-circuit tolerance.
Electric Vehicle Controllers: SGT technology provides excellent switching characteristics, aiding in the design of high-power-density controllers and extending driving range.
Photovoltaic Inverters: Suitable for MPPT circuits and H-bridge topologies, effectively reducing losses in high-current paths and improving grid-tied efficiency.
Load Switches and Power Distribution: TO263 package facilitates layout of high-current buses, suitable for applications requiring high-reliability power distribution such as industrial PLCs and communication base stations.
Selection Summary: The CRSS037N10N-VB achieves an excellent balance between low voltage drop, high current, high voltage tolerance, and reliable heat dissipation. It is a high-performance general-purpose choice for 100V high-power switching applications, especially suitable for projects with strict requirements on conduction losses, thermal management, and system compactness.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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