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AOB66935L-VB Product details
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AOB66935L-VB is a Single N-MOS deeply optimized for high-power-density switching scenarios, using SGT (Shielded Gate Trench) process to achieve an excellent balance between ultra-low on-resistance and fast switching capability. The TO263 package offers superior heat dissipation and current-carrying capacity, suitable for industrial-grade high-current applications. The robust combination of 100V withstand voltage, 180A continuous current, and 3.2mΩ on-resistance makes it an ideal power switch option for server power supplies, power tools, automotive electronics, and high-power DC-DC converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | 3.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Key Selection Criteria
VDS=100V: Suitable for 48V~72V system buses, compatible with 12V/24V/48V multi-level voltage architectures, providing sufficient margin for voltage spikes to enhance system avalanche ruggedness.
VGS=±20V: Wide gate drive window, compatible with 10V~15V standard drive levels, can directly connect to dedicated gate drivers or PWM controllers, simplifying drive design.
Vth=3V (Typical): Moderate threshold voltage effectively prevents false triggering from noise while ensuring the drive circuit can fully turn on under high current conditions.
RDS(on)=3.2mΩ @ VGS=10V: Extremely low on-resistance minimizes conduction losses under high current, significantly reducing device temperature rise, potentially reducing the number of paralleled devices and heatsink size.
ID=180A: Ample continuous current margin to handle demanding load conditions such as motor stall, startup surge, and short-circuit transients.
Package TO263: Large wing-shaped leads facilitate PCB heat dissipation and stress relief, supporting via-assisted thermal design, suitable for high power density layouts.
Technology SGT: Shielded Gate Transistor structure reduces Miller charge for lower switching losses while optimizing body diode reverse recovery characteristics, improving bridge circuit reliability.
VDS=100V: Suitable for 48V~72V system buses, compatible with 12V/24V/48V multi-level voltage architectures, providing sufficient margin for voltage spikes to enhance system avalanche ruggedness.
VGS=±20V: Wide gate drive window, compatible with 10V~15V standard drive levels, can directly connect to dedicated gate drivers or PWM controllers, simplifying drive design.
Vth=3V (Typical): Moderate threshold voltage effectively prevents false triggering from noise while ensuring the drive circuit can fully turn on under high current conditions.
RDS(on)=3.2mΩ @ VGS=10V: Extremely low on-resistance minimizes conduction losses under high current, significantly reducing device temperature rise, potentially reducing the number of paralleled devices and heatsink size.
ID=180A: Ample continuous current margin to handle demanding load conditions such as motor stall, startup surge, and short-circuit transients.
Package TO263: Large wing-shaped leads facilitate PCB heat dissipation and stress relief, supporting via-assisted thermal design, suitable for high power density layouts.
Technology SGT: Shielded Gate Transistor structure reduces Miller charge for lower switching losses while optimizing body diode reverse recovery characteristics, improving bridge circuit reliability.
Domain and module applications：
Decision Value Analysis
High-Power DC-DC Converter: The 3.2mΩ ultra-low on-resistance significantly reduces synchronous rectification losses, greatly improving heavy-load efficiency and facilitating module miniaturization.
Server and Communication Power Supplies: The 100V withstand voltage covers mainstream intermediate bus voltages, and the 180A current capability meets the needs of high-current output branches, reducing the difficulty of parallel current sharing.
Electric Vehicle and Power Tool Controllers: The ultra-low on-resistance reduces controller heat generation, SGT technology speeds up switching, PWM modulation is more precise, and motor operation is smoother.
Lithium Battery Protection Board and BMS: The extremely low on-resistance in high-current charge/discharge loops results in minimal temperature rise on the protection board, supporting high-rate discharge and over-voltage/over-current protection for multi-cell series topologies.
Automotive DC-DC and Auxiliary Power Supply: The wide safe operating area and strong surge withstand capability are suitable for 12V/24V/48V automotive buses, and the TO263 package facilitates compact system integration.
Motor Drive and Inverter: Suitable for power stages in three-phase brushless motors and industrial frequency converters, low switching losses increase the carrier frequency upper limit and reduce electromagnetic interference.
UPS and Energy Storage System: The 100V withstand voltage combined with 180A high current enables efficient power switching between the battery side and the bus side, improving system reliability. Selection Summary: The AOB66935L-VB achieves an excellent balance between ultra-high current capability, ultra-low on-resistance, and robust voltage withstand. It is a high-performance general-purpose choice for 100V high-power switching applications, especially suitable for industrial-grade and automotive-grade projects with stringent requirements for efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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