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HPF800R300PD-G-VB Product details
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Imagine: You are designing a high-voltage industrial power supply, or a photovoltaic inverter, with a bus voltage of up to 800V, yet you need to achieve efficient and reliable power conversion in a limited space. Ordinary high-voltage MOS tubes either have high conduction losses or difficult-to-control switching stresses. VBsemi HPF800R300PD-G-VB is designed for this—it is based on SJ_Multi-EPI superjunction technology, combining 800V withstand voltage, 11A continuous current capability, and 380mΩ on-resistance in a compact TO252 package, making high-voltage, high-density power design effortless.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- Drain-Source Voltage 800V, easily handles high-voltage bus and surge spikes
- Gate Drive Range ±30V, compatible with wide-range drive circuits, higher reliability
- Threshold Voltage 3.5V, stable turn-on at standard drive levels
- On-Resistance 380mΩ (at 10V drive), maintains low losses even in high-voltage scenarios
- Maximum Current 11A, excellent power density in TO252 package
- Superjunction Multi-Epitaxial Technology (SJ_Multi-EPI), optimizing the balance between on-resistance and switching performance
- Gate Drive Range ±30V, compatible with wide-range drive circuits, higher reliability
- Threshold Voltage 3.5V, stable turn-on at standard drive levels
- On-Resistance 380mΩ (at 10V drive), maintains low losses even in high-voltage scenarios
- Maximum Current 11A, excellent power density in TO252 package
- Superjunction Multi-Epitaxial Technology (SJ_Multi-EPI), optimizing the balance between on-resistance and switching performance
Domain and module applications：
Real-World Scenarios
Switching Power Supply / Charging Pile Module – Acts as a high-voltage power switch, effectively reducing conduction losses, improving overall efficiency and thermal reliability.
Photovoltaic Inverter / Energy Storage System – Withstands DC bus high voltage, completes DC-AC power conversion stably, aiding efficient utilization of clean energy.
Industrial Frequency Converter / Motor Drive – Utilizes 800V withstand voltage and low on-resistance to cope with harsh grid environments, reducing system temperature rise.
Electric Vehicle On-Board Charger (OBC) – Achieves efficient power conversion on the high-voltage side, extending range and reducing thermal stress.
UPS Uninterruptible Power Supply – Provides robust high-voltage switching performance in rectifier/inverter stages, ensuring power continuity for critical loads.
High-Voltage DC-DC Converter – Suitable for communication base stations, server power supplies, etc., achieving high step-up or step-down conversion, increasing power density.
One-sentence summary: The HPF800R300PD-G-VB is not just an ordinary high-voltage MOS transistor; it is your 'high-voltage efficiency champion' and 'reliable choice' for 800V-level power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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