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HPD800R450PD-G-VB Product details
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Still troubled by high switching losses and high conduction heat? VBsemi HPD800R450PD-G-VB is here to help! This N-MOS tube in a TO252 package, using advanced SJ_Multi-EPI superjunction technology, withstands up to 800V but can carry 11A continuous current, with a typical on-resistance of only 380mΩ, optimizing both switching and conduction losses. The wide gate drive range is compatible with various control schemes, making it a "reliable choice" for high-voltage power supplies, inverters, and charging scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 800V (high-voltage application, ample margin)
Drive Range: ±30V (compatible with common drives like 10V/12V/15V)
Threshold Voltage: 3.5V (stable threshold, strong noise immunity)
On-Resistance: 380mΩ @ 10V (superjunction process, low conduction losses)
High Current Capability: 11A (achieving high power density in TO252 package)
Package: TO252 (excellent thermal dissipation, suitable for direct PCB mounting)
Technology: SJ_Multi-EPI Superjunction Multi-Epitaxial Process (fast switching, low figure of merit)
Drive Range: ±30V (compatible with common drives like 10V/12V/15V)
Threshold Voltage: 3.5V (stable threshold, strong noise immunity)
On-Resistance: 380mΩ @ 10V (superjunction process, low conduction losses)
High Current Capability: 11A (achieving high power density in TO252 package)
Package: TO252 (excellent thermal dissipation, suitable for direct PCB mounting)
Technology: SJ_Multi-EPI Superjunction Multi-Epitaxial Process (fast switching, low figure of merit)
Domain and module applications：
– Five High-Voltage Scenarios, One Solution
Switching Power Supply: Adapters, industrial power supplies, high-voltage DC-DC, high efficiency, low temperature rise
LED Lighting Driver: High-voltage constant current solution, stable and reliable, flicker-free
Electric Vehicle Charger: High-voltage rectification and switching conversion, withstands harsh conditions
Photovoltaic Inverter: MPPT and inverter stage power switch, aiding efficient clean energy conversion
Industrial Auxiliary Power Supply: Wide voltage input, impact-resistant, providing solid support for control systems
HPD800R450PD-G-VB – High-voltage super junction, low resistance, high efficiency, making your power supply design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
