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CRJD450N80G2-VB Product details
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VBsemi CRJD450N80G2-VB is a Single N-channel field-effect transistor, belonging to the VBsemi brand product series. This product features high voltage, low conduction losses, and high reliability, suitable for various power conversion and power control applications. Manufactured using SJ_Multi-EPI superjunction technology, it has a drain-source voltage (VDS) of 800V and supports a gate-source voltage (VGS) of ±30V. The product is packaged in TO252, suitable for application environments requiring efficient heat dissipation and convenient installation at medium power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- Drain-Source Voltage (VDS): 800V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- Gate-Source Resistance (VGS=10V): 380mΩ
- Maximum Drain Current (ID): 11A
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxial Process)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- Gate-Source Resistance (VGS=10V): 380mΩ
- Maximum Drain Current (ID): 11A
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxial Process)
Domain and module applications：
1. Switching Power Supply Primary Side Switch: The CRJD450N80G2-VB is suitable for the primary side MOSFET circuit of switching power supplies with 220V to 380V AC input, such as adapters, chargers, and industrial power modules, providing high-efficiency switching performance and stable voltage withstand capability.
2. LED Lighting Driver Power Supply: In high-voltage LED lighting driver circuits, this device can be used as a power switch in flyback or buck topologies to achieve efficient power conversion, meeting the needs of long-life lighting applications.
3. Photovoltaic Inverters and Energy Storage Systems: This model is suitable for boost or inverter circuits in photovoltaic micro-inverters and energy storage converters, utilizing its high voltage and low on-resistance characteristics to improve system conversion efficiency and reliability.
4. High-Voltage DC-DC Converters: In high-voltage DC conversion systems such as electric vehicle charging pile auxiliary power supplies and communication base station power supplies, the CRJD450N80G2-VB can be used as a switching transistor or synchronous rectifier, ensuring low-loss operation at high frequencies.
5. Industrial Motor Drive Auxiliary Power Supply: This device can be used in auxiliary switching power supplies for industrial inverters and servo drives, as well as bus switches for small motor control circuits, improving system surge immunity.
6. High-Voltage Battery Management and Protection Circuits: In high-voltage battery pack management systems for power tools, two-wheel electric vehicles, etc., it can be used as the main switch or protection switch for charging and discharging circuits, achieving reliable on/off control and abnormal protection.
7. Home Appliance and White Goods Power Modules: In the switching power supply sections of home appliances like inverter air conditioners and induction cookers, this MOSFET provides stable high-voltage switching performance, improving overall energy efficiency and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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