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CRJD600N80G2E-VB Product details
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VBsemi CRJD600N80G2E-VB is a Single N-channel field-effect transistor using SJ_Multi-EPI technology, designed for high-voltage power conversion and high-reliability industrial control scenarios. Its TO252 package achieves a good balance between thermal performance and PCB layout flexibility, suitable for medium to high power density applications. The device provides stable switching characteristics within an 800V drain-source voltage range, and with a wide gate drive range of ±30V, it is compatible with various gate drive circuits, facilitating system-level integration and protection design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 8A | 550(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 8A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 8A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Drain-Source Voltage (VDS): 800V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V (typical)
On-Resistance (VGS=10V): 550mΩ (typical)
Maximum Drain Current (ID): 8A
Package: TO252
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial Process)
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V (typical)
On-Resistance (VGS=10V): 550mΩ (typical)
Maximum Drain Current (ID): 8A
Package: TO252
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial Process)
Domain and module applications：
1. Switched-Mode Power Supplies (SMPS): Used as the main switch in high-voltage DC-DC converters, flyback and forward topologies, utilizing superjunction structure to reduce conduction and switching losses, improving overall efficiency.
2. Adapters and Chargers: Suitable for fast chargers with 100-240V wide voltage input and industrial power modules, achieving high power density and stable output.
3. Power Factor Correction (PFC): Serves as the switching device in Boost PFC circuits, maintaining low-loss operation under high voltage and high frequency conditions, improving power quality.
4. Photovoltaic Inverters: Used in the DC-AC conversion stage of string inverters or microinverters, withstanding high bus voltage and supporting efficient energy conversion.
5. High-Voltage Motor Drives: Drives medium and small power high-voltage motors and loads such as pumps and fans, cooperating with PWM control for speed regulation and energy-saving operation.
6. Industrial Auxiliary Power Supplies: Applied in auxiliary power supply for industrial equipment like servo drives and frequency converters, providing reliable switching characteristics and long-term stability.
7. High-Voltage Battery Management Systems: Used for high-voltage side on/off control of battery packs in electric vehicles or energy storage systems, ensuring system safety and reducing conduction losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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