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BUK4D110-20PX-VB Product details

Product introduction:

BUK4D110-20PX-VB is a Single P-MOS deeply optimized for low-voltage power switching scenarios. The Trench process balances low switching losses with high reliability, and the DFN6(2X2) package strikes a balance between heat dissipation and board space. The combination of -20V withstand voltage, -10A current carrying capacity, and 20mΩ on-resistance (@VGS=10V) makes it an ideal cost-reducing upgrade option to replace traditional SOP-8 or SOT23 packaged devices, especially suitable for high-density, portable applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-P -20V -0.6V -10A 40(mΩ) 28(mΩ) 20(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-P
VDS=-20V: Suitable for 3.7V/5V/12V low-voltage systems, providing ample margin for negative voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 2.5V~12V logic levels, can be directly connected to MCU/PMIC, eliminating level-shifting circuits.
Vth=-0.6V (Typical): Turns on with low-voltage drive, suitable for battery voltage decay or low-voltage rail scenarios.
RDS(on)=40mΩ @ VGS=2.5V: Enters conduction state with drive voltage as low as 2.5V, simplifying low-voltage drive design.
RDS(on)=28mΩ @ VGS=4.5V: Lower on-resistance at common logic levels, significantly reducing full-load temperature rise.
RDS(on)=20mΩ @ VGS=10V: Ultra-low on-resistance, reduces required heatsink copper area, improves system efficiency.
ID=-10A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package DFN6(2X2): Small size, low parasitic parameters, supports high-frequency switching, saves PCB area and assembly cost.

Domain and module applications:


Decision Value Analysis
Portable Device Power Management: P-MOS low on-resistance improves load switch efficiency, small package enables ultra-thin design, extending battery life.
Battery Protection Module: Fast response ensures microsecond-level shutdown during overcurrent/short circuit, low on-resistance reduces protection board self-heating.
Low-Voltage Motor Drive: Low PWM switching loss, smoother motor operation, significantly lower controller temperature rise.
Consumer Electronics Control Module: Logic level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets, USB switches.
LED Lighting Drive: Low on-voltage drop reduces constant current source power loss, supports multi-channel parallel connection, improving overall luminaire efficacy.
DC-DC Converters: Replaces traditional diodes in load switches or reverse polarity protection, low voltage drop, high efficiency, facilitating module miniaturization.
Automotive Auxiliary Power: Voltage margin and wide operating temperature range adapt to 12V automotive bus, high reliability. Summary: BUK4D110-20PX-VB achieves a balance between performance margin, package size, and system cost, making it a high-cost-performance universal choice for -20V low-voltage P-MOS switch applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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