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STD80N450K6-VB Product details
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STD80N450K6-VB is a Single N-MOSFET deeply optimized for high-voltage power switching scenarios. Using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, it achieves an excellent balance between on-resistance and switching speed at an 800V withstand voltage level. The TO252 package balances heat dissipation capability with ease of mounting, suitable for industrial power supplies, charging stations, photovoltaic inverters, and other applications with strict requirements for high-voltage reliability and energy efficiency, serving as a high-performance alternative to traditional planar high-voltage MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
VDS=800V: Covers three-phase rectification, PFC boost, and industrial bus voltage scenarios, providing ample voltage margin for spikes and significantly reducing avalanche breakdown risk.
VGS=±30V: Wide gate drive voltage tolerance, compatible with various PWM controllers and driver ICs, simplifying gate protection circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, ensures stable and reliable switching behavior under high voltage.
RDS(on)=380mΩ @ VGS=10V: Excellent on-resistance level for an 800V device, effectively reduces conduction loss and improves full-load efficiency.
ID=11A: Continuous current capability meets the needs of medium and small power high-voltage converters, combined with low thermal resistance package for compact thermal management.
Package TO252: Standard DPAK package, low thermal resistance, mature soldering process, suitable for automated mass production, saves PCB layout space.
Technology SJ_Multi-EPI: Superjunction structure significantly optimizes the trade-off between on-resistance and breakdown voltage, combining low loss and fast recovery characteristics to enhance system reliability.
VGS=±30V: Wide gate drive voltage tolerance, compatible with various PWM controllers and driver ICs, simplifying gate protection circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, ensures stable and reliable switching behavior under high voltage.
RDS(on)=380mΩ @ VGS=10V: Excellent on-resistance level for an 800V device, effectively reduces conduction loss and improves full-load efficiency.
ID=11A: Continuous current capability meets the needs of medium and small power high-voltage converters, combined with low thermal resistance package for compact thermal management.
Package TO252: Standard DPAK package, low thermal resistance, mature soldering process, suitable for automated mass production, saves PCB layout space.
Technology SJ_Multi-EPI: Superjunction structure significantly optimizes the trade-off between on-resistance and breakdown voltage, combining low loss and fast recovery characteristics to enhance system reliability.
Domain and module applications：
Decision Value Analysis
High-Voltage DC-DC Converter: Low conduction loss and high voltage rating improve conversion efficiency, suitable for high-efficiency scenarios like communication power supplies and server power supplies.
PFC Power Factor Correction: SJ_Multi-EPI technology reduces switching losses, effectively controls temperature rise with continuous conduction mode, simplifying thermal design.
Photovoltaic Inverter: 800V voltage rating and 11A current capability adapt to photovoltaic panel string voltage, ensuring stable operation over a wide input range.
Charging Pile Auxiliary Power Supply: High voltage margin handles grid fluctuations, low RDS(on) reduces full-load heating, extending equipment life.
Industrial Motor Drive: Performs robustly in built-in high-voltage bridges or auxiliary power supply circuits, with strong surge immunity, suitable for three-phase 380V industrial environments.
High-Power LED Lighting Driver: Direct step-down from high-voltage input reduces transformer stages, improving power density and overall luminous efficacy.
Battery Formation and Aging Equipment: Synchronous rectification or switch positions can withstand higher bus voltages, offering high reliability for continuous operation and reducing maintenance costs. Selection Summary: The STD80N450K6-VB, with its 800V voltage rating, 380mΩ on-resistance, and TO252 package, is a cost-effective general-purpose choice for high-voltage switching applications. Its low loss and high reliability from the SJ_Multi-EPI process make it particularly suitable for industrial-grade projects with clear requirements for efficiency, temperature rise, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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