The VBQA165A10S is a high-performance Enhancement‑Mode (E‑MODE) GaN HEMT developed by VBsemi. It is configured as a Single‑N channel device, featuring a 650V drain‑source voltage (VDS), a gate‑source voltage range of –1.5V to +7V, and a typical threshold voltage (Vth) of 1.6V. Under a 6V gate drive, the on‑resistance (RDS(on)) is as low as 190 mΩ, while the maximum continuous drain current (ID) reaches 10A.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 650V | -1.4~7V | 1.5V | 10A | 190(mΩ) | E-MODE |
Model： VBQA165A10S
**Package**: DFN8(5X6)
**Configuration**: Single-N Channel
** Drain-Source Voltage (VDS )**: 650V
**Gate-Source Voltage (VGS)**: -1.4~7V
**Threshold Voltage (Vth)**: 1.5V
**Drain-Source On-Resistance (RDS(on))**:190mΩ @ VGS = 6V
**Maximum drain current (ID)**: 10A
**Technology**: E-MODE
With its combination of high‑frequency capability, low power loss, and compact footprint, the VBQA165A10S is ideally suited for a wide range of power conversion applications, including:
Fast Chargers & Wireless Charging – Enables high‑frequency, high‑power‑density designs for consumer quick‑charge adapters and Qi‑compliant wireless charging modules.
Server & Data Center Power Supplies – Reduces energy consumption and improves reliability, supporting green and efficient data center infrastructures.
Electric Vehicle (EV) Charging Piles – Delivers stable performance under high‑voltage, high‑current conditions, ensuring robust and efficient charging systems.
Industrial Inverters & Power Management – Meets the demanding requirements of high‑frequency, high‑efficiency industrial power supplies and motor drive inverters.
DC‑DC Converters – Boosts conversion efficiency while lowering heat dissipation, enhancing overall system performance.
Beyond these core areas, the VBQA165A10S also finds strong potential in 5G RF power supplies, on‑board chargers (OBC) for automotive, and portable energy storage systems, making it a versatile building block for next‑generation power electronics.
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