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AOD4185 vs AOD4185-VB: Model Specs Comparison Report
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Basic Information
Project | AOD4185 (Original Version) | AOD4185-VB (VB Version) |
Manufacturer | Alpha & Omega Semiconductor | VBsemi |
Component Type | P-Channel Enhancement MOSFET | P-Channel MOSFET |
Page count | 6 pages | 9 pages |
Absolute Maximum Ratings
Parameters | AOD4185 | AOD4185-VB | Differences |
VDS | -40V | -40V | ✅ Same |
VGS | ±20V | ±20V | ✅ Same |
ID(TC=25°C) | -40A | -50A | VB Higher |
ID(TC=125°C) | -31A | -39A | VB Higher |
IDM | - | -200A | VB Provide |
IAR | - | -40A | VB Provide |
EAS | - | 80mJ | VB Provide |
PD(TC=25°C) | 2.5W | 136W | VB Much higher |
PD(TC=125°C) | 1.6W | 45W | VB Much higher |
TJ | -55 to 175°C | -55 to +175°C | ✅ Same |
Electrical characteristics (25°C)
Parameters | AOD4185 | AOD4185-VB | Differences |
VDS | -40V | -40V | ✅ Same |
VGS(th) | -1.7 ~ -3V | -1.0 ~ -3.5V | VB Wider Range |
RDS(on) @ VGS=-10V, ID=-20A | <15mΩ (max) | 12mΩ (typ) | VB Better |
VGS=-10V, ID=-10A, 125°C | - | 17mΩ | VB Provide |
VGS=-4.5V, ID=-15A | <20mΩ (max) | 15mΩ (typ) | VB Better |
gFS | 50S (typ) | 61S (typ) | VB Higher |
VSD (IS=-20A) | -0.72V (typ) | -1V (max) | - |
IS | -20A | -50A | VB Higher |
Ciss | 2550pF | 3000pF | VB Slightly Larger |
Coss | 280pF | 508pF (max) | VB Large |
Crss | 190pF | 352pF (max) | VB Large |
Qg (VGS=-10V) | 55nC (max) | 80nC (max) | VB Large |
Rg | 2.5~6Ω | 1.5~4.5Ω | VB Lower |
Thermal Characteristics
Parameters | AOD4185 | AOD4185-VB |
RθJA | 50°C/W (steady state) | 50°C/W |
RθJC | 2.4°C/W | 1.1°C/W |
Package
Parameters | AOD4185 | AOD4185-VB |
Package | TO-251A (IPAK), TO-252 (DPAK) | TO-252 (DPAK) |
Key Differences Summary
Current Capability: AOD4185-VB has a higher continuous current rating (-50A vs -40A)
On-Resistance: AOD4185-VB has a lower typical value (12mΩ vs <15mΩ)
Power Rating: AOD4185-VB is significantly higher
Thermal Resistance: AOD4185-VB has a better junction-to-case thermal resistance (1.1 vs 2.4°C/W)
Gate Charge: AOD4185-VB is slightly higher
