VBsemi Semiconductor – 20 Years of Dedicated R&D and Customization of MOSFETs & IGBTs

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I. Background and Needs

With the widespread application of AI flight control, intelligent obstacle avoidance, and swarm formation technologies in the drone field, higher demands are being placed on power MOSFETs in the power system. VBsemi, based on advanced SGT and Trench processes, provides AI drones with complete power solutions covering ESC, power management, and intelligent load switching.

Core requirement metrics:

II. AI Drone's Dedicated Tri-Core Powertrain

2.1 VBGQF1402 · ESC Power Core (SGT Process)

As the core switch of the three-phase inverter bridge for brushless motor drive (ESC), the VBGQF1402 achieves ultra-low switching losses using the SGT process and supports PWM frequencies up to 100kHz, meeting the millisecond-level precise torque control requirements of AI flight controllers.

2.2 VBQF1206 · Intelligent Power Manager (Trench Technology)

Used for battery output protection and intelligent power distribution circuits. The extremely low gate threshold can be directly controlled by a 1.8V/3.3V MCU GPIO, and the ultra-low on-resistance of 5.5mΩ results in extremely low losses under a full load of 58A, directly improving the drone endurance by 5%-8%.

2.3 VBC6N2022 · AI Flight Controller Guardian (Trench Dual N)

It is responsible for the intelligent power supply switching and protection of various sensors (IMU, vision, radar) and communication modules (image transmission, data transmission) on the flight controller motherboard. The dual N-channel integrated design saves 70% of PCB space. It is driven by logic levels and can be directly controlled by the flight controller MCU. With the help of AI algorithms, it can dynamically shut down unnecessary loads and achieve millisecond-level power consumption management.

III. AI Electric Drone Powertrain Architecture Diagram

The diagram below illustrates the complete powertrain architecture based on the VBsemi tri-core MOSFET combination, covering the entire design from battery input to motor drive and flight controller power management.

               Figure 1: AI Electric Drone Power System Architecture Diagram (VBsemi MOSFET Selection Scheme)

IV. Recommended Configuration (Based on the Number of Drone Axles)

V. Why does this solution align with the AI drone trend?

Ultra-low switching losses with SGT technology: The VBGQF1402 adopts SGT technology, which reduces switching losses by 30% compared to traditional Trench technology. It supports 100 kHz high-frequency PWM to meet the millisecond-level precise control requirements of AI flight controllers.

Direct logic level drive simplifies design: Both VBQF1206 and VBC6N2022 support 1.8V/3.3V logic level drive, eliminating the need for an additional gate driver IC, reducing BOM cost and PCB complexity.

Dual N-channel integration saves space: The VBC6N2022's dual N-channel integrated design saves 70% of PCB space, leaving room for the integration of more AI computing units (NPU/GPU) on the flight controller board.

End-to-end efficiency > 98%: The three components work together to achieve an end-to-end efficiency of over 98% from battery to motor, directly improving drone endurance by 5%-8%, creating a differentiated advantage in the highly competitive drone market.

20 years of deep cultivation in power semiconductor devices: VBsemi has focused on MOSFET & IGBT R&D and customization for 20 years, providing complete ESC (Electronic Speed Controller) reference designs, PCB layout advice, and FAE technical support.

VI. Contact and Support

VBsemi Semiconductor: High-Quality Power Driving the Future