The CJAE10P06-VB from VBsemi is a P-channel trench power MOSFET housed in a compact DFN8 (3mm×3mm) package, designed to deliver low on-resistance and high efficiency in space-constrained applications. Intended for negative voltage switching, the device features a gate-source voltage of ±20V and a typical threshold voltage of -1.7V, making it compatible with common logic-level and gate drive voltages. Leveraging advanced trench technology, the CJAE10P06-VB achieves a low RDS(on) of 28.8mΩ at a gate drive of 4.5V, which further reduces to 21mΩ at 10V, while supporting a continuous drain current of up to -36A, providing an excellent balance between low conduction loss and robust current handling.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -60V | -1.7V | -36A | 28.8(mΩ) | 21(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -60V | -1.7V | -36A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -60V | -1.7V | -36A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P |
Key parameters of the CJAE10P06-VB are as follows: package type is DFN8 (3mm×3mm), configuration is single P-channel, drain-source breakdown voltage is -60V, gate-source voltage range is ±20V, and gate threshold voltage is -1.7V. The on-resistance RDS(on) is 28.8mΩ at VGS = -4.5V and drops to 21mΩ at VGS = -10V. The maximum continuous drain current ID is -36A, and the device is manufactured using trench technology, ensuring excellent switching performance and thermal characteristics.
This P-channel MOSFET is widely used in load switches, battery protection circuits, DC-DC converters, motor drives, and various power management modules. Thanks to its low gate drive voltage and low on-resistance, it is particularly suitable for power path management in portable devices, notebooks and smartphones, as well as USB power switches and battery charging circuits. Moreover, in industrial control, automotive electronics and embedded systems, the CJAE10P06-VB is frequently employed for reverse polarity protection, high-side switching, and PWM control, helping to enhance system reliability and energy efficiency.
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