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SIHG120N60E-GE3-VB Product details
Back to previous pageProduct introduction：
SIHG120N60E-GE3-VB is a rugged, high-efficiency N-channel MOSFET utilizing Super Junction Multi-EPI technology. With a 600 V breakdown voltage and 25 A current capability, it delivers excellent figure-of-merit (FOM) for modern power electronics, reducing conduction and switching losses in compact designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 25A | 110(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 25A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 25A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (mΩ) at 10V gate voltage: 110(mΩ)
- Maximum drain current (ID): 25A
- Technology: SJ_Multi-EPI
Domain and module applications：
SIHG120N60E-GE3-VB is a prime building block for high-density power supplies, telecom rectifiers, and battery charging systems. It is commonly found in PFC stages, DC-DC converters, and inverter modules for renewable energy (e.g., photovoltaic inverters). Thanks to its low thermal resistance and robustness, it can be integrated into power modules such as dual MOSFET packages or as discrete devices in paralleled arrays for scalable power systems like EV onboard chargers and servo drives.
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