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IPW60R090CFD7-VB Product details
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IPW60R090CFD7-VB a high-voltage N-channel power MOSFET built on advanced Super Junction (SJ) Multi-EPI technology. Designed with a single-N configuration, it combines low on-resistance with fast switching performance, making it an ideal choice for efficient power conversion in demanding industrial environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 25A | 110(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 25A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 25A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (mΩ) at 10V gate voltage: 110(mΩ)
- Maximum drain current (ID): 25A
- Technology: SJ_Multi-EPI
Domain and module applications：
This device is well-suited for high-power switched-mode power supplies (SMPS), power factor correction (PFC) circuits, uninterruptible power supplies (UPS), and solar inverters. Its low RDS(on) and high voltage rating also enable efficient operation in electric vehicle chargers and industrial motor drives.
IPW60R090CFD7-VB can be used in half-bridge or full-bridge modules, as well as in parallel configurations for higher current output.
Technical support：
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