IPP120N08S4-03-VB is an SGT Single-N channel power MOSFET designed for efficient power conversion and reliable high-power switching. With a 100 V drain-source voltage rating and a ±20 V gate operating range, this device supports robust performance in inverter, motor-drive, and power-supply applications where stable switching and high current capability are required. Its TO-220 package makes it suitable for cost-effective, thermally manageable power electronics designs.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 100V | 3V | 340A | 2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 100V | 3V | 340A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 100V | 3V | 340A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N |
Product Model: IPP120N08S4-03-VB
Brand: VBsemi
Technology: SGT
Package: TO220
configuration: Single N
VDS (V): 100 V
VGS (±V): 20 V
Vth (V): 3 V
VGS = 10 V (mΩ): 2 mΩ
ID (A): 340 A
This MOSFET is well-suited for:
Power Inverters
Motor Drives / Industrial Control
High-Current DC-DC Converters
Renewable Energy Power Systems (e.g., solar/wind inverters)
Switched-Mode Power Supplies (SMPS)
Module Applications
Inverter Modules for AC drive systems
Power Conversion Modules in DC-DC and DC-AC conversion
Motor Controller Boards (high-current switching stages)
Industrial Power Supply Modules requiring low conduction loss
Battery/EV Charging Power Sections (high current + efficient switching)
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