Driven by the growing demand for energy-efficient and reliable power solutions across industrial and consumer applications, the shift toward domestic core power devices has transformed from an alternative to a strategic necessity. Facing stringent requirements for high voltage, low loss, and robust performance in medium to high-power circuits, identifying a domestic alternative that offers competitive performance, consistent quality, and stable supply has become essential for designers and manufacturers. When considering the established 650V N-channel MOSFET from TOSHIBA—the TK110N65Z,S1F—the VBP16R26S, introduced by VBsemi, stands out as a powerful substitute. It not only matches key performance benchmarks but also delivers enhancements in critical parameters through advanced SJ_Multi-EPI technology, reflecting a shift from "direct replacement" to "performance upgrade."
I. Parameter Comparison and Performance Advantages: Strengths Delivered by SJ_Multi-EPI Technology
The TK110N65Z,S1F has been widely adopted in applications such as switching power supplies and motor drives due to its 650V voltage rating, 24A continuous drain current, and robust power handling capability. However, as efficiency standards rise and thermal management becomes more critical, lower conduction resistance and improved switching characteristics are increasingly important.
1. Building on functional compatibility with a similar voltage class (600V VDS) and TO-247 package, the VBP16R26S achieves meaningful improvements in key electrical parameters through advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology:
- Lower On-Resistance: With VGS = 10V, the RDS(on) is just 115mΩ, reducing conduction losses compared to the reference model. Based on Pcond = I_D²·RDS(on), this enables higher efficiency and lower heat generation at typical operating currents, simplifying thermal management.
- Higher Current Capability: The continuous drain current rating of 26A exceeds that of the TK110N65Z,S1F, supporting higher power output or providing additional design margin in demanding applications.
- Optimized Switching Performance: The SJ_Multi-EPI structure contributes to favorable gate charge and capacitance characteristics, enabling efficient operation at higher switching frequencies and supporting higher power density designs.
2. Enhanced Reliability & Ruggedness: With a VGS rating of ±30V and a threshold voltage Vth of 3.5V, the device offers robust gate tolerance and stable turn-on behavior, improving system durability in noisy environments.
II. Application Scenarios: From Replacement to System Enhancement
The VBP16R26S is not only a pin-to-pin compatible alternative in existing TK110N65Z,S1F applications but can also contribute to system-level improvements:
1. Switching Power Supplies (SMPS)
Lower conduction losses improve efficiency across load ranges, helping to meet modern energy efficiency standards. The higher current rating allows for more compact designs or higher output power within the same form factor.
2. Motor Drives & Inverters
Suitable for appliance motors, industrial motor controls, and fan drives, where low RDS(on) and high current capability reduce losses and improve thermal performance, especially in continuous operation.
3. Power Factor Correction (PFC) Circuits
The 600V voltage rating and efficient switching make it a strong candidate for boost PFC stages in AC-DC power supplies, contributing to higher system efficiency and reliability.
4. Lighting & Energy Conversion
In LED drivers, solar inverters, and auxiliary power modules, the combination of voltage rating, current capability, and low loss supports high-efficiency and high-density designs.
III. Beyond Specifications: Supply Chain Stability and Full-Lifecycle Value
Choosing the VBP16R26S is both a technical and a strategic decision:
1. Domestic Supply Chain Assurance
VBsemi ensures full control from chip design to packaging and testing, providing stable supply, shorter lead times, and reduced exposure to global supply chain disruptions.
2. Cost-Effectiveness
With performance comparable or superior to the international counterpart, the VBP16R26S offers a competitive price structure and potential for customization, reducing overall BOM cost and enhancing end-product value.
3. Local Technical Support
Customers benefit from responsive local support throughout the design cycle—from selection and simulation to testing and failure analysis—accelerating development and problem resolution.
IV. Replacement Guidelines and Implementation
For designs currently using or planning to use the TK110N65Z,S1F, the following steps are recommended for a smooth transition:
1. Electrical Performance Validation
Compare switching waveforms, losses, and thermal behavior under actual circuit conditions. Leverage the lower RDS(on) and higher current rating of the VBP16R26S to optimize drive parameters and improve efficiency.
2. Thermal & Mechanical Verification
Due to reduced conduction losses, thermal design may be relaxed, potentially allowing for smaller heatsinks or improved reliability under the same cooling conditions.
3. Reliability & System Testing
Conduct rigorous electrical, thermal, and environmental tests in the lab before progressing to field trials, ensuring long-term stability and performance in the target application.
Advancing Toward Autonomous, High-Efficiency Power Solutions
The VBsemi VBP16R26S is not just a domestic alternative to the TOSHIBA TK110N65Z,S1F—it is a high-performance, high-reliability MOSFET that leverages advanced SJ_Multi-EPI technology to deliver lower losses, higher current capability, and better switching characteristics. This enables system designers to achieve higher efficiency, improved power density, and enhanced product competitiveness.
In an era where supply chain resilience and technological independence are paramount, choosing the VBP16R26S represents both a smart technical upgrade and a strategic step toward supply chain autonomy. We highly recommend this product and look forward to supporting your transition to higher-performing, domestically sourced power solutions.