In application scenarios such as switching regulators, Toshiba's TK560P60Y,RQ N-channel power MOSFET, with its Super Junction structure DTMOS, low on-resistance, and easy gate control, has been a reliable choice for engineers. However, facing challenges like global supply chain uncertainties and extended lead times, the need for a stable, high-performance domestic alternative has become increasingly critical. Addressing this industry demand, VBsemi introduces the VBE16R07S, a direct and enhanced replacement designed to seamlessly substitute the TK560P60Y,RQ without circuit modifications, offering a more secure and cost-effective solution.
Precise Parameter Matching with Key Enhancements for Demanding Applications
Tailored as a domestic alternative to the TK560P60Y,RQ, the VBE16R07S delivers essential parameter equivalence alongside crucial improvements, ensuring robust performance in switching regulator applications:
The device maintains a drain-source voltage (VDS) of 600V, matching the original part, and supports a continuous drain current (ID) of 7A. The gate threshold voltage (Vth) is optimized at 3.5V, ensuring easy gate switching control and full compatibility with existing driver circuits. A significant advantage is the extended gate-source voltage (VGS) rating of ±30V, providing superior protection against gate ESD and noise-induced malfunctions in complex operational environments.
While the original model features a low on-resistance, the VBE16R07S employs advanced SJ_Multi-EPI technology to achieve an excellent RDS(on) of 650mΩ (@10V). This design effectively balances switching performance and conduction losses, contributing to improved overall system efficiency and thermal management.
Advanced SJ_Multi-EPI Technology for Reliable Switching Performance
The TK560P60Y,RQ utilizes a Super Junction structure (DTMOS) for low on-resistance. The VBE16R07S leverages VBsemi's proprietary SJ_Multi-EPI technology to deliver comparable, high-performance characteristics. This technology ensures low switching losses, excellent dv/dt capability, and stable operation under high-frequency switching conditions. The device is subjected to rigorous reliability testing, including high-temperature and high-humidity aging tests, guaranteeing long-term stability and a failure rate well below industry standards for critical applications.
Fully Compatible Package for Seamless, Risk-Free Replacement
The VBE16R07S is offered in a TO-252 package, which is fully compatible with the TK560P60Y,RQ in terms of pinout, footprint, and mounting dimensions. This complete package compatibility allows for a true "drop-in" replacement, eliminating the need for PCB redesign, thermal system rework, or mechanical adjustments. Engineering validation time is drastically reduced, typically to 1-2 days, enabling swift product transition and significant savings in both time and cost associated with requalification.
Local Supply Chain Assurance and Responsive Technical Support
Unlike imported components susceptible to logistics delays and geopolitical factors, VBsemi guarantees a stable and shortened lead time for the VBE16R07S, typically within 2-3 weeks, with expedited options available. This provides crucial supply chain security and production planning stability. Backed by a local technical support team, VBsemi offers comprehensive assistance, including detailed substitution guides, application notes, and prompt troubleshooting, ensuring a smooth and supported transition from the TK560P60Y,RQ.
From switching regulators and power supplies to various medium-power switching applications, the VBE16R07S stands as the optimal domestic alternative to the Toshiba TK560P60Y,RQ. It combines essential parameter matching, enhanced gate robustness, full package compatibility, and the dual advantages of a secure supply chain and local technical expertise. Choosing the VBE16R07S is a strategic step towards securing your supply chain, optimizing costs, and maintaining product competitiveness with minimal substitution risk.