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Breaking VBQA1101N Through and Surpassing: How Domestic Power MOSFETs Achieve High-Performance Substitution ROHM RS1P600BETB1
time:2026-02-26
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Introduction
Power MOSFETs are the crucial "switches" controlling energy flow in modern electronic devices. For a long time, international brands like ROHM have dominated the market with their classic products, such as the RS1P600BETB1. However, global supply chain volatility and the need for technological autonomy have made seeking reliable, high-performance domestic alternatives a strategic necessity. Represented by VBsemi's VBQA1101N, domestic components are now achieving direct benchmarking and even surpassing international classics.
Part 1: Analysis of the Classic Component
ROHM's RS1P600BETB1 is an N-channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 60A. It features a low on-resistance of 9.7mΩ at 10V and 17.5A, ensuring efficient power handling. This component is widely used in applications such as power supplies, motor drives, and automotive systems, valued for its reliability and performance in medium- to high-current scenarios.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBQA1101N directly benchmarks the RS1P600BETB1 and offers improvements in key parameters:
Higher Current Capability: Continuous drain current reaches 65A (an increase of 5A), enabling greater power handling and margin in demanding applications.
Lower Conduction Loss: Typical on-resistance at 10V is 9mΩ, lower than the 9.7mΩ of the RS1P600BETB1, reducing conduction losses and enhancing system efficiency.
Advanced Technology: Utilizes Trench technology, providing fast switching, high reliability, and optimized performance.
Compact Design: The DFN8(5X6) package offers a small footprint, suitable for space-constrained designs while maintaining robust electrical characteristics.
Part 3: Core Value Beyond Specifications
Choosing a domestic alternative brings deeper advantages:
Ensuring Supply Chain Security: Reduces dependence on international supply chains, mitigating risks and ensuring stable production continuity.
Optimizing Overall Cost: Delivers better cost competitiveness with equivalent or superior performance, potentially lowering total system costs.
Accessing Rapid Local Support: Domestic suppliers can offer agile technical support, custom solutions, and collaborative development tailored to specific application needs.
Boosting the Industrial Ecosystem: Each successful adoption strengthens the domestic semiconductor industry, fostering innovation and technological iteration.
Part 4: A Robust Path for Substitution Implementation
For a smooth transition, the following steps are recommended:
Detailed Specification Comparison: Carefully compare all key parameters, including voltage, current, on-resistance, and switching characteristics.
Rigorous Laboratory Testing: Conduct static and dynamic tests, such as parameter verification, switching performance, thermal analysis, and reliability stress tests.
Small-Batch Pilot Verification: Implement the component in real-world products and environments to validate long-term stability and performance.
Develop a Switchover and Backup Plan: Gradually adopt the substitution after successful verification, while keeping the original design as a short-term backup to ensure minimal disruption.
Conclusion: Moving from "Usable" to "Excellent"
The evolution from the RS1P600BETB1 to the VBQA1101N demonstrates that domestic power semiconductors now possess the capability to compete with and even surpass international classics in key aspects. Adopting such high-performance domestic components is not only a pragmatic choice to address supply chain challenges but also a strategic move to build an autonomous, resilient, and innovative industrial ecosystem for the future. Now is the opportune time to actively evaluate and integrate high-quality domestic solutions.
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