In medium-voltage power switching and management applications such as DC-DC converters, motor drives, battery protection circuits, and power distribution systems, RENESAS's 2SJ302-AZ P-channel power MOSFET has been a reliable component for designers due to its balanced performance. However, in the current climate of global supply chain uncertainty and extended lead times for imported semiconductors, sourcing this part presents challenges including volatile pricing, logistical delays, and limited local technical support. These factors directly impact product development cycles and manufacturing stability for downstream enterprises. Consequently, pursuing a qualified domestic alternative has evolved from a contingency plan to a strategic necessity for ensuring supply chain resilience and cost competitiveness.
Leveraging its extensive expertise in power semiconductor design and manufacturing, VBsemi introduces the VBE2610N P-channel MOSFET. This product is engineered as a direct, pin-to-pin replacement for the 2SJ302-AZ, offering significant parametric enhancements, technological robustness, and full package compatibility. It enables a seamless substitution into existing designs without circuit modifications, delivering a more performant, cost-effective, and supply-secure solution for various medium-voltage applications.
Comprehensive Parameter Advancement, Delivering Enhanced Performance and Margin
Tailored to replace the 2SJ302-AZ, the VBE2610N demonstrates substantial improvements across key electrical specifications, providing greater design headroom and reliability:
Voltage & Current Rating: The VBE2610N supports a drain-source voltage (VDS) of -60V, matching the 2SJ302-AZ's 60V capability, ensuring suitability for the same application environments. More notably, its continuous drain current (ID) is rated at -30A, a substantial 87.5% increase over the original's 16A. This significantly higher current-handling capacity allows for deployment in higher-power circuits or provides a valuable safety margin in existing designs, improving overall system robustness and longevity.
Reduced Conduction Losses: A key advantage lies in its remarkably low on-state resistance. The VBE2610N boasts an RDS(on) of only 61mΩ (measured at VGS=10V), which is approximately 75% lower than the 240mΩ (at VGS=4V) of the 2SJ302-AZ. This dramatic reduction directly translates to lower conduction losses, higher system efficiency, and reduced thermal generation, simplifying heat sink design and improving energy economy.
Gate Characteristics: The device features a gate-source voltage (VGS) rating of ±20V, offering robust protection against gate overstress. Its gate threshold voltage (Vth) of -1.7V ensures stable turn-on/off behavior and provides good noise immunity, making it compatible with standard drive circuits without requiring redesign.
Built on Advanced Trench Technology, Ensuring High Reliability and Switching Performance
The VBE2610N utilizes VBsemi's mature Trench technology platform. This advanced process optimization yields not only the ultra-low RDS(on) but also excellent switching characteristics and high reliability. The device is designed to handle high inrush currents and repetitive switching stresses common in power management applications. Its construction ensures a strong avalanche energy rating and high dv/dt capability, enhancing system durability against voltage transients. Furthermore, the VBE2610N operates reliably across a wide temperature range and has undergone rigorous qualification tests, including high-temperature reverse bias (HTRB) and high-temperature gate bias (HTGB), ensuring long-term stability in demanding conditions such as industrial controls, automotive subsystems, and communication equipment.
Full Package Compatibility for Direct, Risk-Free Replacement
The VBE2610N is offered in the industry-standard TO-252 (DPAK) package, which is mechanically and electrically identical to the package used by the 2SJ302-AZ. This complete pin-to-pin and footprint compatibility allows engineers to drop the VBE2610N directly onto existing PCB layouts. No changes to the circuit board, thermal design, or assembly process are required, enabling a true "plug-and-play" replacement. This eliminates the need for costly and time-consuming re-design, re-validation, and re-tooling, significantly accelerating the substitution process and allowing production lines to switch sources with minimal downtime and zero additional engineering overhead.
Localized Supply Chain and Expert Technical Support
Choosing VBsemi's VBE2610N mitigates the risks associated with overseas component procurement. Supported by VBsemi's domestic manufacturing infrastructure and streamlined logistics, the VBE2610N offers stable, predictable supply with significantly shortened lead times compared to imported alternatives. This ensures production plan stability and protects against geopolitical and trade-related disruptions. Complementing this supply security, VBsemi provides responsive, local technical support. Engineers have direct access to comprehensive documentation, including detailed datasheets, application notes, and substitution guides, as well as prompt assistance from technical specialists to resolve any integration questions swiftly.
From DC-DC converter modules and motor drive circuits to battery management systems and load switches, the VBE2610N stands out as the superior domestic alternative to the RENESAS 2SJ302-AZ. Its compelling advantages of higher current capability, significantly lower on-resistance, complete package compatibility, secured supply, and local support make it an ideal choice for designers seeking to enhance performance, reduce costs, and strengthen their supply chain. Opting for the VBE2610N is more than a component swap—it's a strategic upgrade towards greater design margin, efficiency, and supply chain independence.