In low-current, high-voltage signal switching and interface control applications such as industrial sensor modules, meter protection circuits, communication equipment, and auxiliary power systems, RENESAS's HS54095TZ-E N-channel MOSFET, with its high-voltage withstand capability and compact TO-92 package, has been a common choice for designers. However, in the current context of global supply chain restructuring and geopolitical uncertainties, reliance on imported components like this exposes end-users to challenges such as extended lead times, price volatility, and limited technical support, which hinder product development cycles and cost optimization. Consequently, seeking a reliable, high-performance domestic alternative has become an urgent strategic need for enterprises aiming to secure their supply chains and enhance competitiveness.
Leveraging its expertise in power semiconductor design and manufacturing, VBsemi introduces the VBR165R01 N-channel MOSFET. This product is meticulously engineered to serve as a direct, pin-to-pin replacement for the HS54095TZ-E, offering superior electrical parameters, enhanced reliability, and full package compatibility. It provides a stable, cost-effective, and locally supported solution for various high-voltage, low-current electronic circuits.
Superior Parameter Performance, Delivering Enhanced Design Margins and Efficiency.
Tailored as a domestic upgrade for the HS54095TZ-E, the VBR165R01 achieves significant improvements across key specifications, providing stronger performance and greater design flexibility:
Firstly, the drain-source voltage rating is increased to 650V, offering a 50V (8.3%) higher margin than the original 600V. This provides enhanced protection against line transients and voltage spikes commonly encountered in industrial and mains-connected environments, improving system robustness.
Secondly, the continuous drain current capability is substantially raised to 1A, a five-fold increase over the original 200mA. This remarkable enhancement allows the VBR165R01 to handle higher load currents effortlessly, enabling its use in more demanding circuits or providing substantial headroom in existing designs, thereby improving long-term reliability.
Thirdly, the on-state resistance is drastically reduced. With a low RDS(on) of 6667 mΩ (6.667Ω) at 10V gate drive, it is significantly lower than the HS54095TZ-E's 16.5Ω. This reduction minimizes conduction losses, improves overall circuit efficiency, and reduces heat generation—a critical advantage in space-constrained, thermally sensitive applications.
Furthermore, the VBR165R01 supports a gate-source voltage range of ±20V, ensuring strong immunity against gate noise and ESD events. The optimized gate threshold voltage of 2V ensures easy drive compatibility with common logic-level controllers and driver ICs, facilitating seamless integration without circuit modifications.
Advanced Planar Technology for Inherited and Improved Reliability.
While the HS54095TZ-E relies on its established process for high-voltage operation, the VBR165R01 utilizes advanced Planar gate technology. This technology provides excellent switching characteristics and enhances device reliability through optimized internal structures. The device undergoes rigorous screening and 100% testing, including high-voltage and operational lifetime tests, ensuring consistent performance and high avalanche energy tolerance. Its robust design offers superior dv/dt capability, maintaining stable operation during fast switching and transient events. With an operational junction temperature range of -55°C to 150°C, the VBR165R01 is suitable for harsh environments, including industrial automation and outdoor applications. Its reliability is further validated through extended high-temperature and high-humidity testing, ensuring long-term stability for critical applications.
Fully Compatible TO-92 Package, Enabling Direct Drop-In Replacement.
A primary concern during component substitution is the engineering effort required for redesign and validation. The VBR165R01 eliminates this hurdle through its package design. It employs a standard TO-92 package that is mechanically and electrically identical to the HS54095TZ-E's TO-92 footprint. The pinout, dimensions, and mounting characteristics are fully compatible, allowing for direct "plug-and-play" replacement on existing PCB layouts. This compatibility drastically reduces substitution time and cost—no PCB redesign, thermal re-simulation, or mechanical rework is needed. Validation can typically be completed within days, accelerating time-to-market and minimizing risks associated with design changes.
Local Supply Chain Assurance and Responsive Technical Support.
Unlike imported components subject to logistical delays and trade uncertainties, VBsemi's domestic manufacturing infrastructure ensures a stable and secure supply for the VBR165R01. With streamlined production and localized logistics, lead times are consistently short, and rapid delivery options are available. This effectively mitigates risks related to international supply chain disruptions. Additionally, VBsemi provides dedicated local technical support, offering comprehensive documentation—including substitution guides, detailed datasheets, and application notes—along with prompt, personalized assistance. Engineers can receive timely solutions and circuit optimization advice, significantly reducing the support lag often experienced with overseas suppliers.
From industrial control interfaces and protection circuits to communication modules and auxiliary power switches, the VBR165R01 stands out as the ideal domestic alternative to the RENESAS HS54095TZ-E. Its core strengths—higher voltage and current ratings, lower conduction loss, full package compatibility, secure supply, and local expert support—have made it the preferred choice for numerous companies across industries. Opting for the VBR165R01 is more than a component swap; it is a strategic move toward supply chain resilience, cost optimization, and product reliability—enabling immediate performance gains without design risks.