Introduction
Power MOSFETs are the crucial "switches" controlling energy flow in modern electronic devices. For a long time, international brands like ROHM have dominated the market with their classic products, such as the EM6K33T2R. However, global supply chain volatility and the need for technological autonomy have made seeking reliable, high-performance domestic alternatives a strategic necessity. Represented by VBsemi's VBTA3615M, domestic components are now achieving direct benchmarking and even surpassing international classics.
Part 1: Analysis of the Classic Component
ROHM's EM6K33T2R is a dual N-channel MOSFET (50V, 200mA) with an on-resistance of 2.2Ω at 4.5V. It utilizes a compact design for low-power applications such as portable electronics, load switching, and signal control, offering reliable performance in space-constrained environments. It has become a standard choice for many designs requiring efficient dual N-channel solutions.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBTA3615M directly benchmarks the EM6K33T2R and offers improvements in key parameters:
Higher Voltage Withstand and Current: Drain-source voltage reaches 60V (an increase of 10V), and continuous drain current reaches 0.3A (an increase of 0.1A), providing a wider safety margin and greater power handling capability.
Lower Conduction Loss: On-resistance at 10V is 1200mΩ (1.2Ω), significantly lower than the classic component, helping to reduce conduction losses and improve system efficiency.
Enhanced Gate Characteristics: Gate threshold voltage is 1.7V with a VGS rating of ±20V, ensuring robust switching performance and compatibility.
Full Compatibility: Uses a pin-compatible SC75-6 package with Dual-N+N configuration, enabling direct replacement without PCB modifications.
The device is based on advanced Trench technology, ensuring stable and reliable operation.
Part 3: Core Value Beyond Specifications
Choosing a domestic alternative brings deeper advantages:
Ensuring Supply Chain Security: Reduces dependence on a single international supply chain, ensuring supply stability and production continuity.
Optimizing Overall Cost: Typically offers better cost competitiveness with equivalent or superior performance, potentially enabling optimization of peripheral designs (e.g., power management).
Accessing Rapid Local Support: Domestic suppliers can provide more agile technical support and joint development tailored to actual application scenarios.
Boosting the Industrial Ecosystem: Every successful application helps the domestic semiconductor industry accumulate experience and iterate technology, forming a virtuous development cycle.
Part 4: A Robust Path for Substitution Implementation
For a smooth transition, the following steps are recommended:
Detailed Specification Comparison: Carefully compare all key electrical parameters and characteristic curves.
Rigorous Laboratory Testing: Conduct static parameter tests, dynamic switching tests, temperature rise/efficiency tests, and reliability stress tests.
Small-Batch Pilot Verification: Trial the component in real products and environments, tracking long-term performance.
Develop a Switchover and Backup Plan: Implement the substitution gradually after verification is complete, while retaining the original design as a short-term backup.
Conclusion: Moving from "Usable" to "Excellent"
The evolution from the EM6K33T2R to the VBTA3615M demonstrates that domestic power semiconductors now possess the capability to compete with and even surpass international classics in certain aspects. Adopting such high-performance domestic components is not only a pragmatic choice to address current supply chain challenges but also a strategic move to build an autonomous, resilient, and innovative industrial ecosystem for the future. Now is the opportune time to actively evaluate and introduce high-quality domestic solutions.