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Breaking VBN16R20S Through and Surpassing: How Domestic Power MOSFETs Achieve High-Performance Substitution for STI24N60M2
time:2026-02-24
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Introduction
Power MOSFETs serve as critical "switches" managing energy flow in modern electronic systems. For years, international giants like STMicroelectronics (ST) have led the market with flagship products such as the STI24N60M2. However, global supply chain uncertainties and the pursuit of technological self-reliance have made finding reliable, high-performance domestic alternatives a strategic imperative. Represented by VBsemi's VBN16R20S, domestic components are now achieving direct对标and even surpassing international benchmarks.
Part 1: Analysis of the Classic Component
ST's STI24N60M2 is a high-voltage MOSFET (650V, 18A) featuring MDmesh M2 technology. This advanced design delivers a low typical on-resistance (0.168Ω) while maintaining robust voltage withstand capability, ensuring high efficiency and reliability. It is widely adopted in medium- to high-power applications like switching power supplies, motor drives, and industrial controls, establishing itself as a go-to solution in many designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBN16R20S directly对标s the STI24N60M2 and demonstrates enhancements in key parameters:
Higher Current Handling: Continuous drain current reaches 20A (an increase of 2A), enabling greater power capacity and design flexibility.
Lower Conduction Loss: On-resistance is reduced to 150mΩ (typical) at 10V, compared to 190mΩ for the ST part, minimizing conduction losses and improving overall system efficiency.
Full Compatibility: The TO-262 package is pin-compatible with I2PAK, allowing for drop-in replacement without PCB redesign.
Advanced Technology: Built on a mature SJ_Multi-EPI (Super Junction Multi-Epitaxial) process, it ensures stable performance and high reliability.
Part 3: Core Value Beyond Specifications
Opting for a domestic alternative offers deeper strategic benefits:
Ensuring Supply Chain Security: Reduces reliance on single-source international supply chains, safeguarding production continuity and stability.
Optimizing Total Cost: Provides competitive pricing with superior performance, potentially lowering system costs through simplified thermal management or peripheral design.
Accessing Agile Local Support: Domestic suppliers can deliver faster technical assistance and customized solutions tailored to specific application needs.
Strengthening the Industrial Ecosystem: Each successful substitution fuels the growth of the domestic semiconductor sector, fostering innovation and a virtuous cycle of development.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Comparison: Thoroughly review all electrical parameters, characteristic curves, and application notes.
Rigorous Laboratory Testing: Conduct static parameter tests, dynamic switching evaluations, thermal performance assessments, and reliability stress tests.
Small-Batch Pilot Verification: Deploy the component in real-world products and environments, monitoring long-term behavior and compatibility.
Develop a Switchover and Backup Plan: Implement the substitution gradually post-verification, while retaining the original design as a short-term backup option.
Conclusion: Moving from "Usable" to "Excellent"
The progression from the STI24N60M2 to the VBN16R20S underscores that domestic power semiconductors have evolved to not only match but exceed international classics in key aspects. Embracing such high-performance domestic components is both a practical response to current supply chain dynamics and a strategic step toward building an autonomous, resilient, and innovative industrial future. Now is the time to proactively evaluate and integrate premium domestic solutions like the VBN16R20S.
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