Introduction
Power MOSFETs serve as critical switches managing energy flow in modern electronics, with international brands like ROHM setting benchmarks with components such as the RS1P600BHTB1. However, global supply chain uncertainties and the drive for technological self-reliance have made high-performance domestic alternatives a strategic imperative. Represented by VBsemi's VBGQA1107, domestic MOSFETs are now achieving direct competition and surpassing international classics in key applications.
Part 1: Analysis of the Classic Component
ROHM's RS1P600BHTB1 is a high-current N-channel MOSFET featuring a drain-source voltage of 100V and a continuous drain current of 60A. It utilizes low on-resistance technology (8.8mΩ at 10V, 18A) to minimize conduction losses, packaged in a compact surface-mount design. With lead-free plating, RoHS compliance, halogen-free construction, and 100% testing for gate resistance (Rg) and unclamped inductive switching (UIS), it ensures reliability in demanding environments. This component is widely adopted in primary-side switching and motor drive circuits, establishing itself as a go-to solution for medium-power designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBGQA1107 directly targets the RS1P600BHTB1, offering enhanced performance across critical parameters:
Higher Current Capacity: The continuous drain current reaches 75A (a 15A increase over the 60A of RS1P600BHTB1), enabling greater power handling and margin in high-load scenarios.
Lower Conduction Losses: With a typical on-resistance of 7.4mΩ at 10V (improved from 8.8mΩ), it reduces heat generation and boosts system efficiency.
Advanced Technology: Built on SGT (Shielded Gate Trench) technology, it optimizes switching performance and reliability.
Full Compatibility: The DFN8(5x6) surface-mount package mirrors the form factor, allowing drop-in replacement without PCB redesigns.
Part 3: Core Value Beyond Specifications
Choosing VBGQA1107 extends benefits beyond technical specs:
Supply Chain Resilience: Reduces dependency on global suppliers, ensuring stable sourcing and production continuity.
Cost Optimization: Offers competitive pricing with superior performance, potentially lowering overall system costs through simplified thermal management.
Rapid Local Support: Domestic suppliers provide agile technical assistance and customization for application-specific needs.
Ecosystem Growth: Each successful adoption strengthens the domestic semiconductor industry, fostering innovation and a virtuous cycle of development.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Comparison: Review all electrical parameters, including VDS, ID, RDS(on), and switching characteristics.
Rigorous Laboratory Testing: Conduct static and dynamic tests (e.g., switching speed, efficiency), temperature rise evaluations, and reliability stress tests.
Small-Batch Pilot Verification: Implement the component in real-world applications like motor drives, monitoring long-term stability and performance.
Develop a Switchover Plan: Phase in VBGQA1107 after validation, while keeping the original design as a short-term backup to mitigate risks.
Conclusion: Moving from "Usable" to "Excellent"
The shift from ROHM's RS1P600BHTB1 to VBsemi's VBGQA1107 demonstrates that domestic power MOSFETs can not only match but exceed international standards in current handling and efficiency. Adopting such high-performance alternatives is a practical response to supply chain challenges and a strategic step toward building an autonomous, resilient industrial ecosystem. Now is the time to actively evaluate and integrate domestic solutions like VBGQA1107 for a sustainable future.