In high-power switching applications such as industrial motor drives, server power supplies, and energy conversion systems, ROHM's R6024KNXGZC7 has been widely recognized for its low on-resistance, ultra-fast switching speed, and ease of parallel use. However, global supply chain uncertainties and extended lead times for imported components have increasingly impacted production stability and cost control for downstream manufacturers. In this context, domestic substitution emerges as a strategic solution to secure the supply chain and enhance competitive advantage.
VBsemi introduces the VBMB16R20S N-channel power MOSFET, a precisely engineered domestic alternative to the R6024KNXGZC7. Leveraging independent research and advanced SJ_Multi-EPI technology, this component offers superior electrical performance, full package compatibility, and reliable supply, enabling a seamless and efficient replacement without circuit modifications.
Performance Enhancement with Lower Conduction Losses and Robust Design
The VBMB16R20S delivers critical improvements in key parameters, providing greater design margin and operational reliability:
- It maintains the same 600V drain-source voltage rating, ensuring compatibility in high-voltage environments.
- The continuous drain current is rated at 20A, robustly supporting high-current applications while offering a balance of performance and reliability.
- A standout feature is the reduced on-state resistance of 150mΩ (at 10V gate drive), significantly lower than the 165mΩ of the R6024KNXGZC7. This reduction directly translates to lower conduction losses, higher system efficiency, and reduced thermal dissipation.
- The device supports a ±30V gate-source voltage, enhancing gate robustness and noise immunity in demanding electrical environments. The 3.5V typical threshold voltage ensures reliable switching and easy drive compatibility with common controller ICs.
Advanced SJ_Multi-EPI Technology for Fast Switching and High Reliability
The VBMB16R20S utilizes VBsemi's proprietary SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology. This advanced process achieves an excellent figure of merit (low RDS(on) × Qg), enabling ultra-fast switching speeds that match or surpass the original component. The technology also provides superior dv/dt capability and avalanche ruggedness, ensuring stable operation under high-frequency switching and transient conditions. The device is rated for a wide operating junction temperature range from -55°C to 150°C and is subjected to rigorous reliability testing, including HTRB and high-temperature aging, guaranteeing long-term durability in harsh industrial environments.
Drop-In Replacement with TO-220F Package for Zero Redesign Effort
The VBMB16R20S is housed in a standard TO-220F package, which is mechanically and dimensionally identical to the package used by the R6024KNXGZC7. This complete pin-to-pin and footprint compatibility allows engineers to perform a direct "drop-in" replacement. No changes to the PCB layout, thermal design, or assembly process are required, eliminating validation time, minimizing risk, and accelerating the time-to-market for upgraded products.
Stable Local Supply and Responsive Technical Support
VBsemi ensures a stable and responsive supply chain from its domestic production facilities, dramatically reducing lead times compared to imported alternatives and mitigating risks associated with international logistics and trade policies. The company backs the VBMB16R20S with comprehensive local technical support, including detailed datasheets, application notes, and expert assistance for substitution验证 and circuit optimization, ensuring a smooth and successful transition.
Ideal for switch-mode power supplies, motor control, UPS systems, and welding equipment, the VBMB16R20S stands as a superior domestic alternative to the ROHM R6024KNXGZC7. It combines enhanced electrical performance, guaranteed package compatibility, and a secure local supply chain, offering engineers a reliable, efficient, and cost-effective solution to upgrade their designs and secure their production.