In high-efficiency switch-mode power supplies, server PSUs, industrial motor drives, and premium LED lighting systems, ROHM's R6011KNXC7G N-channel MOSFET, renowned for its low on-resistance and robust Super Junction performance, has been a trusted component for designers seeking optimal efficiency. However, navigating the complexities of global procurement—extended lead times, cost volatility, and logistical uncertainties—poses significant challenges for production planning and cost control. This reality makes sourcing a reliable, high-performance domestic alternative not just strategic but essential for supply chain resilience.
Responding to this critical need, VBsemi leverages its advanced semiconductor expertise to introduce the VBMB16R11S. This device is engineered as a direct, pin-to-pin replacement for the R6011KNXC7G, delivering parameter equivalency, full package compatibility, and the undeniable advantages of localized supply and support.
Parameter Match & Performance Parity, Enabling Hassle-Free Replacement
The VBMB16R11S is meticulously designed to meet or exceed the key specifications of the R6011KNXC7G, ensuring seamless integration into existing designs:
Drain-Source Voltage (Vdss): 600V, providing identical voltage endurance for high-voltage bus applications.
Continuous Drain Current (Id): 11A, matching the current-carrying capability for sustained high-power operation.
On-State Resistance (RDS(on)): A low 380mΩ (at Vgs=10V), slightly superior to the 390mΩ of the R6011KNXC7G. This reduction directly translates to lower conduction losses, enhanced energy efficiency, and reduced thermal stress, contributing to cooler running and improved system reliability.
Gate-Source Voltage (Vgs): ±30V, offering strong gate robustness against voltage spikes and noise.
Gate Threshold Voltage (Vth): 3.5V, ensuring compatibility with standard gate drive circuits without modification.
Advanced Super Junction Multi-EPI Technology for High Reliability
The R6011KNXC7G relies on advanced Super Junction technology for its performance. The VBMB16R11S employs a sophisticated SJ_Multi-EPI (Super Junction Multi-Epitaxial) process, achieving an excellent balance between low on-resistance and fast switching characteristics. It undergoes rigorous 100% avalanche energy and high-voltage screening, ensuring high durability against transient voltage surges. With an operating junction temperature range up to 150°C and proven reliability under stringent environmental tests, it is built to deliver stable, long-term performance in demanding applications.
Perfect Package Compatibility for True "Drop-In" Replacement
The VBMB16R11S comes in a standard TO-220F package, which is mechanically and electrically identical to the package of the R6011KNXC7G. This complete footprint compatibility allows engineers to replace the component directly on the existing PCB without any layout changes, thermal redesign, or mechanical adjustments. This "plug-and-play" approach eliminates redesign costs, slashes validation time, and accelerates the time-to-market for your product upgrades, making the transition to a domestic supplier virtually risk-free.
Local Supply Chain Assurance and Proactive Technical Support
Choosing VBMB16R11S means breaking free from international supply chain constraints. Supported by VBsemi's domestic manufacturing capabilities, stable and shorter lead times are guaranteed, protecting your production lines from external disruptions. Coupled with responsive local technical support that provides comprehensive documentation, application guidance, and swift issue resolution, the substitution process becomes smooth and fully supported.
From high-density power supplies and industrial inverters to advanced lighting solutions, the VBMB16R11S stands as the ideal domestic successor to the R6011KNXC7G. It combines electrical parity, superior packaging compatibility, and the security of a localized supply chain. Opting for the VBMB16R11S is a decisive step towards securing your production, optimizing costs, and enhancing product reliability—all with zero redesign effort.