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Breaking VBQA1606 Through and Surpassing: How Domestic Power MOSFETs Achieve High-Performance Substitution RS1L145GNTB
time:2026-02-07
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Introduction
Power MOSFETs serve as essential "switches" for energy control in modern electronics. For years, international brands like ROHM have led the market with established products such as the RS1L145GNTB. However, global supply chain uncertainties and the push for technological self-reliance have made finding reliable, high-performance domestic alternatives a strategic priority. Represented by VBsemi's VBQA1606, domestic components are now achieving direct对标and even surpassing international benchmarks.
Part 1: Analysis of the Classic Component
ROHM's RS1L145GNTB is an N-channel MOSFET featuring a drain-source voltage of 60V, a continuous drain current of 47A, and a low on-resistance of 9.7mΩ at 10V. It uses a high-power HSOP8 package and boasts characteristics like lead-free pin coating, RoHS compliance, halogen-free construction, and 100% testing for Rg and UIS. This device is widely adopted in switching applications due to its balance of performance and reliability.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBQA1606 directly对标s the RS1L145GNTB and demonstrates superior key parameters:
Higher Current Capacity: Continuous drain current reaches 80A (a significant increase from 47A), enabling greater power handling and design margins.
Lower Conduction Loss: Typical on-resistance is 6mΩ at 10V (compared to 9.7mΩ), reducing conduction losses and improving system efficiency.
Robust Voltage Ratings: Drain-source voltage is 60V, with a gate-source voltage of ±20V and a threshold voltage of 2.5V, ensuring compatibility and stability.
Advanced Packaging: The DFN8(5X6) package offers a compact footprint and enhanced thermal performance, suitable for modern high-density designs.
The device leverages Trench technology, providing optimized switching characteristics and reliability.
Part 3: Core Value Beyond Specifications
Opting for a domestic alternative delivers deeper advantages:
Supply Chain Resilience: Reduces reliance on single-source international suppliers, ensuring stable availability and production continuity.
Cost Efficiency: Often provides better cost-performance ratios, potentially lowering overall system costs and allowing optimization of peripheral components.
Agile Local Support: Domestic suppliers offer faster technical assistance, customization, and collaborative development tailored to specific application needs.
Ecosystem Growth: Each successful adoption strengthens the domestic semiconductor industry, fostering innovation and a virtuous cycle of improvement.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Review: Compare all electrical parameters, including dynamic characteristics and thermal behavior.
Comprehensive Laboratory Testing: Perform static and dynamic tests, efficiency measurements, thermal assessments, and reliability validations under real-world conditions.
Pilot Validation: Implement small-batch trials in actual products to monitor long-term performance and compatibility.
Develop a Switchover Plan: Gradually integrate the alternative after successful verification, while keeping the original design as a short-term backup to mitigate risks.
Conclusion: Moving from "Usable" to "Excellent"
The progression from the RS1L145GNTB to the VBQA1606 illustrates that domestic power MOSFETs now compete with and exceed international classics in key areas. Adopting such high-performance domestic components is not only a practical response to supply chain challenges but also a strategic step toward building an autonomous, resilient, and innovative industrial ecosystem. The time is ripe to actively evaluate and integrate quality domestic solutions like the VBQA1606.
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