Introduction
Power MOSFETs serve as essential switching components in modern electronic circuits, managing energy flow with precision. For years, international manufacturers like Infineon have set industry benchmarks with established products such as the BSS138WH6327. However, growing supply‑chain uncertainties and the push for technological self‑reliance have made finding reliable, high‑performance domestic alternatives a strategic priority. Represented by VBsemi’s VBK162K, domestic semiconductors are now achieving direct对标and even surpassing international classics in key parameters.
Part 1: Analysis of the Classic Component
Infineon’s BSS138WH6327 is a small‑signal N‑channel enhancement‑mode MOSFET featuring a 60 V drain‑source voltage and 280 mA continuous drain current. Designed as a logic‑level device with dv/dt ruggedness, it offers a typical on‑resistance of 6 Ω at VGS=4.5 V. The component is halogen‑free according to IEC61249‑2‑21, qualified to AEC‑Q101 for automotive applications, and supplied in a compact SC70‑3 package. It is widely used in space‑constrained portable electronics, battery‑management circuits, and low‑power switching applications.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi’s VBK162K directly对标the BSS138WH6327 and delivers notable improvements:
Higher Current Capability: Continuous drain current reaches 0.3 A (300 mA), offering a margin over the classic’s 280 mA.
Lower Conduction Loss: On‑resistance is specified as 2000 mΩ (2 Ω) at VGS=10 V, significantly lower than the reference device’s 6 Ω at 4.5 V, reducing power dissipation in conduction.
Robust Gate Handling: Gate‑source voltage rating of ±20 V enhances durability in noisy environments.
Advanced Trench Technology: The device is built on an optimized trench process, ensuring low RDS(on) and reliable switching performance.
Full Compatibility: Provided in the same SC70‑3 package, the VBK162K allows drop‑in replacement without layout changes.
Part 3: Core Value Beyond Specifications
Selecting a domestic alternative like the VBK162K brings additional strategic benefits:
Supply‑Chain Resilience: Reduces sole reliance on international suppliers, ensuring stable availability and production continuity.
Cost Optimization: Delivers equal or better performance with often improved cost‑effectiveness, enabling potential savings in system design.
Local Support Agility: Domestic suppliers can offer faster technical response and application‑specific collaboration.
Ecosystem Strengthening: Every successful substitution helps accumulate experience and drive technological iteration within the domestic semiconductor industry.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Comparison: Review all electrical parameters, threshold voltage, and switching characteristics.
Rigorous Laboratory Testing: Perform static parameter verification, dynamic switching tests, thermal evaluation, and reliability stress tests.
Small‑Batch Pilot Verification: Test the component in actual end‑equipment under real operating conditions, monitoring long‑term stability.
Develop a Switchover and Backup Plan: After full validation, implement the substitution gradually while keeping the original design as a short‑term backup option.
Conclusion: Moving from “Usable” to “Excellent”
The progression from the Infineon BSS138WH6327 to VBsemi’s VBK162K illustrates that domestic power semiconductors are now capable of competing with—and in key aspects surpassing—established international counterparts. Adopting such high‑performance domestic components is not only a practical response to current supply‑chain challenges but also a strategic step toward building an autonomous, resilient, and innovative industrial ecosystem. Now is the right time to actively evaluate and integrate high‑quality domestic solutions.