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Breaking VBE17R07S Through and Surpassing: How Domestic Power MOSFETs Achieve High-Performance Substitution IPD70R900P7S
time:2026-01-22
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Introduction
Power MOSFETs are the crucial "switches" controlling energy flow in modern electronic devices. For a long time, international brands like Infineon have dominated the market with their advanced products, such as the IPD70R900P7S. However, global supply chain volatility and the need for technological autonomy have made seeking reliable, high-performance domestic alternatives a strategic necessity. Represented by VBsemi's VBE17R07S, domestic components are now achieving direct对标and even surpassing international classics.
Part 1: Analysis of the Classic Component
Infineon's IPD70R900P7S is a high-voltage MOSFET (700V, 3.5A) utilizing CoolMOS P7 technology. This technology, based on the superjunction (SJ) principle, offers a revolutionary design for fast-switching超结MOSFETs, combining excellent cost-performance ratio and ease of use for cost-sensitive applications like chargers, adapters, lighting, and TVs. It meets high efficiency standards, enables high power density, and has become a preferred choice for slim designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBE17R07S directly对标s the IPD70R900P7S and offers improvements in key parameters:
Higher Current Handling: Continuous drain current reaches 7A (an increase of 3.5A), providing greater power handling capability.
Lower Conduction Loss: Typical on-resistance is 750mΩ (compared to 900mΩ), helping to reduce conduction losses and improve system efficiency.
Full Compatibility: Uses a pin-compatible TO-252 package, enabling direct replacement without PCB modifications.
The device is based on an optimized SJ_Multi-EPI technology, ensuring stable and reliable performance.
Part 3: Core Value Beyond Specifications
Choosing a domestic alternative brings deeper advantages:
Ensuring Supply Chain Security: Reduces dependence on a single international supply chain, ensuring supply stability and production continuity.
Optimizing Overall Cost: Typically offers better cost competitiveness with equivalent or superior performance, potentially enabling optimization of peripheral designs (e.g., thermal management).
Accessing Rapid Local Support: Domestic suppliers can provide more agile technical support and joint development tailored to actual application scenarios.
Boosting the Industrial Ecosystem: Every successful application helps the domestic semiconductor industry accumulate experience and iterate technology, forming a virtuous development cycle.
Part 4: A Robust Path for Substitution Implementation
For a smooth transition, the following steps are recommended:
Detailed Specification Comparison: Carefully compare all key electrical parameters and characteristic curves.
Rigorous Laboratory Testing: Conduct static parameter tests, dynamic switching tests, temperature rise/efficiency tests, and reliability stress tests.
Small-Batch Pilot Verification: Trial the component in real products and environments, tracking long-term performance.
Develop a Switchover and Backup Plan: Implement the substitution gradually after verification is complete, while retaining the original design as a short-term backup.
Conclusion: Moving from "Usable" to "Excellent"
The evolution from the IPD70R900P7S to the VBE17R07S demonstrates that domestic power semiconductors now possess the capability to compete with and even surpass international classics in certain aspects. Adopting such high-performance domestic components is not only a pragmatic choice to address current supply chain challenges but also a strategic move to build an autonomous, resilient, and innovative industrial ecosystem for the future. Now is the opportune time to actively evaluate and introduce high-quality domestic solutions.
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