Introduction
Power MOSFETs are essential switches for energy control in modern electronics. International brands like ROHM have long led the market with established products such as the RUC002N05T116. Yet, global supply chain instability and the push for technological independence make finding reliable domestic alternatives a strategic priority. Represented by VBsemi's VB1695, domestic components are now achieving direct competition and even surpassing international classics.
Part 1: Analysis of the Classic Component
ROHM's RUC002N05T116 is a low-voltage MOSFET (50V, 200mA) known for very fast switching and ultra-low voltage drive (1.2V). It features a lead-free, RoHS-compliant, and halogen-free design, with an on-resistance of 1.6Ω at 4.5V gate drive. This makes it ideal for switching circuits and low-side load switches in compact applications.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VB1695 directly targets the RUC002N05T116 and delivers key enhancements:
Higher Voltage and Current Capacity: Drain-source voltage rises to 60V (a 10V increase), and continuous drain current reaches 4A (a substantial boost from 200mA), offering greater power handling and design margin.
Reduced Conduction Loss: Typical on-resistance is as low as 75mΩ at 10V gate drive, significantly lowering conduction losses and improving system efficiency.
Full Compatibility: Uses a pin-compatible SOT23-3 package, allowing direct replacement without PCB redesign.
Advanced Technology: Built on Trench technology, ensuring reliable and stable performance.
Part 3: Core Value Beyond Specifications
Opting for a domestic alternative like VB1695 adds deeper benefits:
Securing Supply Chains: Reduces dependence on international sources, ensuring supply stability and production continuity.
Cost Optimization: Provides competitive pricing with superior performance, potentially lowering overall system costs.
Rapid Local Support: Domestic suppliers offer agile technical assistance and customized solutions for specific applications.
Strengthening the Industrial Ecosystem: Each successful use fuels the growth of the domestic semiconductor sector, driving innovation and a virtuous cycle.
Part 4: A Robust Path for Substitution Implementation
For a seamless transition, follow these steps:
Detailed Specification Comparison: Thoroughly compare all electrical parameters and characteristic curves.
Rigorous Laboratory Testing: Conduct static parameter tests, dynamic switching tests, temperature rise/efficiency tests, and reliability stress tests.
Small-Batch Pilot Verification: Trial the component in real products and environments, monitoring long-term performance.
Develop a Switchover and Backup Plan: Implement substitution gradually after verification, while retaining the original design as a short-term backup.
Conclusion: Moving from "Usable" to "Excellent"
The shift from ROHM's RUC002N05T116 to VBsemi's VB1695 showcases how domestic power MOSFETs can compete with and exceed international standards. Embracing such high-performance domestic components is not only a practical solution to supply chain challenges but also a strategic move toward building an autonomous, resilient, and innovative industrial future. Now is the ideal time to actively evaluate and adopt quality domestic solutions.