In modern power design, balancing performance, size, and cost is critical. This article takes two representative MOSFETs—DMP2165UW-7 (P-channel) and DMC3028LSD-13 (complementary dual)—as benchmarks, analyzing their design focus and application scenarios, while evaluating domestic alternatives VBK2298 and VBA5325. By comparing parameter differences and performance orientations, we provide a clear selection guide to help you choose the most suitable power switching solution.
Comparative Analysis: DMP2165UW-7 (P-channel) vs. VBK2298
Analysis of the Original Model (DMP2165UW-7) Core:
This is a 20V P-channel MOSFET from DIODES in a compact SOT-323 package. It is designed to minimize on-resistance while maintaining excellent switching performance, making it ideal for efficient power management. Key advantages include a continuous drain current of 2.5A and an on-resistance of 180mΩ at 1.8V gate drive.
Compatibility and Differences of the Domestic Alternative (VBK2298):
VBsemi’s VBK2298 is offered in an SC70-3 package and serves as a functional alternative. It features a similar voltage rating (-20V) but provides significantly lower on-resistance: 100mΩ at 2.5V and 80mΩ at 4.5V. The continuous current rating is also higher at -3.1A, offering improved conduction performance.
Key Application Areas:
- Original Model DMP2165UW-7: Suitable for space-constrained, low-to-medium current switching in 12V–20V systems, such as load switching in portable devices, power management modules, or low-power DC-DC converters.
- Alternative Model VBK2298: A performance-enhanced choice for applications requiring lower conduction loss and higher current capability within a similar voltage range, ideal for upgraded power management circuits.
Comparative Analysis: DMC3028LSD-13 (Complementary Dual) vs. VBA5325
Analysis of the Original Model (DMC3028LSD-13) Core:
This DIODES complementary dual MOSFET (N+P) in an SO-8 package is designed for high-efficiency power management. It features low on-resistance (28mΩ for the N-channel at 10V) and fast switching, with continuous currents of 6.6A (N) and 6.8A (P). Its integrated dual-die design simplifies circuit layout in synchronous converters.
Compatibility and Differences of the Domestic Alternative (VBA5325):
VBsemi’s VBA5325 is a pin-to-pin compatible dual N+P MOSFET in SOP8 package. It offers enhanced performance: higher voltage ratings (±30V), lower on-resistance (18mΩ for N-channel and 40mΩ for P-channel at 10V), and higher continuous current (±8A for both channels). This makes it a superior choice in terms of conduction loss and current handling.
Key Application Areas:
- Original Model DMC3028LSD-13: Ideal for compact synchronous buck/boost converters, motor drives, or power path management in 12V–30V systems where efficient dual-MOSFET integration is needed.
- Alternative Model VBA5325: Suited for higher-performance applications demanding lower resistance, higher current, and better voltage margin, such as high-current DC-DC converters, advanced motor drives, or industrial power modules.
Conclusion
The comparison reveals two clear paths:
- For P-channel applications in compact designs, the original DMP2165UW-7 offers a balanced solution, while VBK2298 provides lower on-resistance and higher current for performance-focused upgrades.
- For complementary dual-MOSFET applications, the original DMC3028LSD-13 delivers reliable integration, whereas VBA5325 significantly enhances current capability, reduces on-resistance, and increases voltage tolerance.
Selection depends on precise requirement matching. Domestic alternatives like VBK2298 and VBA5325 not only offer reliable compatibility but also provide performance advantages in key parameters, giving engineers greater flexibility in design trade-offs and cost optimization.