中文
English
ZXMS6004DGTC-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
ZXMS6004DGTC-VB is a single-tube N-channel MOSFET in SOT223 package, with a drain-source withstand voltage of 60V and a maximum drain current capability of 4.5A. It uses Trench technology, has low on-resistance, and ensures efficient current conduction. Its gate voltage (VGS) can reach ±20V, ensuring high compatibility with control signals. This model has an on-resistance of 85mΩ at VGS=4.5V, and the on-resistance is reduced to 76mΩ at VGS=10V. It is suitable for power switches, DC-DC converters, load switches and other application scenarios.
ZXMS6004DGTC-VB is a single-tube N-channel MOSFET in SOT223 package, with a drain-source withstand voltage of 60V and a maximum drain current capability of 4.5A. It uses Trench technology, has low on-resistance, and ensures efficient current conduction. Its gate voltage (VGS) can reach ±20V, ensuring high compatibility with control signals. This model has an on-resistance of 85mΩ at VGS=4.5V, and the on-resistance is reduced to 76mΩ at VGS=10V. It is suitable for power switches, DC-DC converters, load switches and other application scenarios.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description:
- **Model**: ZXMS6004DGTC-VB
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (Vds)**: 60V
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (Rds(on))**:
- Rds(on) @ Vgs = 4.5V: 85mΩ
- Rds(on) @ Vgs = 10V: 76mΩ
- **Maximum drain current (Id)**: 4.5A
- **Technology type**: Trench
- **Operating temperature range**: -55°C To +150°C (specific temperature range is selected according to application requirements)
- **Maximum power loss**: >1W (specific value needs to be evaluated according to actual use conditions)
- **Model**: ZXMS6004DGTC-VB
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (Vds)**: 60V
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (Rds(on))**:
- Rds(on) @ Vgs = 4.5V: 85mΩ
- Rds(on) @ Vgs = 10V: 76mΩ
- **Maximum drain current (Id)**: 4.5A
- **Technology type**: Trench
- **Operating temperature range**: -55°C To +150°C (specific temperature range is selected according to application requirements)
- **Maximum power loss**: >1W (specific value needs to be evaluated according to actual use conditions)
Domain and module applications：
Application fields and module description:
1. **DC-DC converter**: The low on-resistance of ZXMS6004DGTC-VB makes it particularly suitable for use in DC-DC converters, especially for high-efficiency power conversion. Because it can provide lower losses and higher current carrying capacity, it can minimize power loss during the conversion process, thereby improving the overall conversion efficiency.
2. **Load switch**: This MOSFET has a higher current carrying capacity and excellent switching characteristics, suitable for load switch applications, can quickly switch the current flow in a shorter time, ensure the normal start and stop of the equipment, and is widely used in communication equipment, battery management systems and other fields.
3. **Power management system**: In various power management systems, ZXMS6004DGTC-VB can be used as a switching device. Its lower Rds(on) reduces power loss, and the gate voltage can be as high as ±20V, making it stable under different control signals, suitable for various battery-powered, UPS power management and other occasions.
4. **Power switch**: This MOSFET can be widely used in various power switching circuits, including power tools, motor drive circuits and other fields. It can withstand higher currents, and its low Rds(on) characteristics ensure less heat generation during switching, enhancing the reliability of the system.
5. **Automotive electronic system**: In the field of automotive electronics, ZXMS6004DGTC-VB can be used in scenarios such as battery management, on-board power modules, and electric vehicle drive systems, providing efficient current switching and control to ensure stable operation of the power system.
6. **Low-voltage power switch**: When used as a switching device in a low-voltage power system, ZXMS6004DGTC-VB can effectively control the flow of voltage and current, and reduce power consumption by optimizing the on-resistance. It is commonly found in low-voltage devices such as consumer electronics and home automation equipment.
1. **DC-DC converter**: The low on-resistance of ZXMS6004DGTC-VB makes it particularly suitable for use in DC-DC converters, especially for high-efficiency power conversion. Because it can provide lower losses and higher current carrying capacity, it can minimize power loss during the conversion process, thereby improving the overall conversion efficiency.
2. **Load switch**: This MOSFET has a higher current carrying capacity and excellent switching characteristics, suitable for load switch applications, can quickly switch the current flow in a shorter time, ensure the normal start and stop of the equipment, and is widely used in communication equipment, battery management systems and other fields.
3. **Power management system**: In various power management systems, ZXMS6004DGTC-VB can be used as a switching device. Its lower Rds(on) reduces power loss, and the gate voltage can be as high as ±20V, making it stable under different control signals, suitable for various battery-powered, UPS power management and other occasions.
4. **Power switch**: This MOSFET can be widely used in various power switching circuits, including power tools, motor drive circuits and other fields. It can withstand higher currents, and its low Rds(on) characteristics ensure less heat generation during switching, enhancing the reliability of the system.
5. **Automotive electronic system**: In the field of automotive electronics, ZXMS6004DGTC-VB can be used in scenarios such as battery management, on-board power modules, and electric vehicle drive systems, providing efficient current switching and control to ensure stable operation of the power system.
6. **Low-voltage power switch**: When used as a switching device in a low-voltage power system, ZXMS6004DGTC-VB can effectively control the flow of voltage and current, and reduce power consumption by optimizing the on-resistance. It is commonly found in low-voltage devices such as consumer electronics and home automation equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
