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ZXMN6A25GTC-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
ZXMN6A25GTC-VB is a unipolar N-channel MOSFET in SOT-223 package, suitable for a variety of low-voltage, high-power electronic applications. The product has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It has excellent conductivity, low on-resistance (RDS(on)) and large drain current (ID = 7A), making it perform well in high-efficiency, high-current applications. It is based on trench technology, has good switching characteristics and thermal stability, and is suitable for fields that require efficient power conversion and low power loss.
ZXMN6A25GTC-VB is a unipolar N-channel MOSFET in SOT-223 package, suitable for a variety of low-voltage, high-power electronic applications. The product has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It has excellent conductivity, low on-resistance (RDS(on)) and large drain current (ID = 7A), making it perform well in high-efficiency, high-current applications. It is based on trench technology, has good switching characteristics and thermal stability, and is suitable for fields that require efficient power conversion and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. Detailed parameter description:
- **Model**: ZXMN6A25GTC-VB
- **Package**: SOT-223
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 33mΩ@VGS = 4.5V
- 28mΩ@VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: Trench
- **Model**: ZXMN6A25GTC-VB
- **Package**: SOT-223
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 33mΩ@VGS = 4.5V
- 28mΩ@VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples:
# a) **Power management system**:
ZXMN6A25GTC-VB is suitable for high-efficiency power conversion applications, such as DC-DC converters, power switches and other modules. Due to its low on-resistance, it can reduce power loss during the conversion process and improve the overall efficiency of the power supply, especially in application scenarios that require low voltage and stable current output.
# b) **Battery management and charging module**:
This MOSFET is very suitable for battery management systems for battery charging and discharging control. The low on-resistance and high current carrying capacity enable it to achieve high-efficiency control in battery management modules, especially for battery protection circuits and power switching in notebooks, smartphones and other portable electronic devices.
# c) **Power switch and current protection**:
ZXMN6A25GTC-VB has a wide range of applications in the field of power switches, especially in scenarios that require fast switching and high current carrying, it can provide extremely low switching losses. Common applications include motor drives, DC power switches, overcurrent protection circuits, etc.
# a) **Power management system**:
ZXMN6A25GTC-VB is suitable for high-efficiency power conversion applications, such as DC-DC converters, power switches and other modules. Due to its low on-resistance, it can reduce power loss during the conversion process and improve the overall efficiency of the power supply, especially in application scenarios that require low voltage and stable current output.
# b) **Battery management and charging module**:
This MOSFET is very suitable for battery management systems for battery charging and discharging control. The low on-resistance and high current carrying capacity enable it to achieve high-efficiency control in battery management modules, especially for battery protection circuits and power switching in notebooks, smartphones and other portable electronic devices.
# c) **Power switch and current protection**:
ZXMN6A25GTC-VB has a wide range of applications in the field of power switches, especially in scenarios that require fast switching and high current carrying, it can provide extremely low switching losses. Common applications include motor drives, DC power switches, overcurrent protection circuits, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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