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ZXMN4A06KTC-VB Product details
Back to previous pageProduct introduction：
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ZXMN4A06KTC-VB is a unipolar N-channel MOSFET that uses Trench technology and has a low on-resistance (RDS(ON)), which enables it to have higher efficiency and lower power consumption in high current applications. The maximum drain-source voltage of this MOSFET is 40V, and the maximum drain current can reach 55A, which is suitable for a variety of electronic systems with high power and high efficiency requirements. Its TO-252 package is suitable for applications with limited space but high performance.
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ZXMN4A06KTC-VB is a unipolar N-channel MOSFET that uses Trench technology and has a low on-resistance (RDS(ON)), which enables it to have higher efficiency and lower power consumption in high current applications. The maximum drain-source voltage of this MOSFET is 40V, and the maximum drain current can reach 55A, which is suitable for a variety of electronic systems with high power and high efficiency requirements. Its TO-252 package is suitable for applications with limited space but high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench
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- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench
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Domain and module applications：
**Applications and modules**
The low on-resistance characteristics of the ZXMN4A06KTC-VB make it very suitable for high-power and high-efficiency applications. This product can be widely used in circuits such as switching power supplies (such as DC-DC converters), motor drives (such as DC motors and brushless motor control), battery management systems, load switches, LED drivers, and high-power load control. Due to its high current carrying capacity (maximum 55A), this MOSFET is particularly suitable for high-power applications such as power conversion, UPS (uninterruptible power supply), and high-current drive modules such as power tools. In addition, its high switching frequency and low RDS(ON) can effectively reduce heat and power consumption in the system and improve overall energy efficiency.
The low on-resistance characteristics of the ZXMN4A06KTC-VB make it very suitable for high-power and high-efficiency applications. This product can be widely used in circuits such as switching power supplies (such as DC-DC converters), motor drives (such as DC motors and brushless motor control), battery management systems, load switches, LED drivers, and high-power load control. Due to its high current carrying capacity (maximum 55A), this MOSFET is particularly suitable for high-power applications such as power conversion, UPS (uninterruptible power supply), and high-current drive modules such as power tools. In addition, its high switching frequency and low RDS(ON) can effectively reduce heat and power consumption in the system and improve overall energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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