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ZXMN4A06GTA-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
ZXMN4A06GTA-VB is a unipolar N-channel MOSFET (field effect transistor) in SOT-223 package, suitable for various low voltage, high power applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(on)), which makes it excel in high-efficiency applications. Its threshold voltage (Vth) is 1.7V, and it can operate stably at a lower gate voltage. ZXMN4A06GTA-VB is particularly suitable for use in high current drive, power switching, and power management.
ZXMN4A06GTA-VB is a unipolar N-channel MOSFET (field effect transistor) in SOT-223 package, suitable for various low voltage, high power applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(on)), which makes it excel in high-efficiency applications. Its threshold voltage (Vth) is 1.7V, and it can operate stably at a lower gate voltage. ZXMN4A06GTA-VB is particularly suitable for use in high current drive, power switching, and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. Detailed parameter description:
- **Model**: ZXMN4A06GTA-VB
- **Package**: SOT-223
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 33mΩ@VGS = 4.5V
- 28mΩ@VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: Trench
- **Model**: ZXMN4A06GTA-VB
- **Package**: SOT-223
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 33mΩ@VGS = 4.5V
- 28mΩ@VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples:
# c) **Power switch and current protection**:
ZXMN6A25GTC-VB is widely used in the field of power switches, especially in scenarios that require fast switching and high current carrying, and can provide extremely low switching losses. Common applications include motor drives, DC power switches, overcurrent protection circuits, etc.
# b) **High current drive field**:
Due to its high drain current (7A) and low RDS(on), this MOSFET is particularly suitable for driving high current loads, such as motor drives, motor control systems, etc. Its low on-resistance can reduce heat generation and ensure stable operation of the circuit.
# c) **Power switch module**:
The high switching speed and low on-resistance of this product make it outstanding in power switch modules, and it is suitable for scenarios that require fast switching, such as reverse protection circuits, overcurrent protection circuits, etc.
# c) **Power switch and current protection**:
ZXMN6A25GTC-VB is widely used in the field of power switches, especially in scenarios that require fast switching and high current carrying, and can provide extremely low switching losses. Common applications include motor drives, DC power switches, overcurrent protection circuits, etc.
# b) **High current drive field**:
Due to its high drain current (7A) and low RDS(on), this MOSFET is particularly suitable for driving high current loads, such as motor drives, motor control systems, etc. Its low on-resistance can reduce heat generation and ensure stable operation of the circuit.
# c) **Power switch module**:
The high switching speed and low on-resistance of this product make it outstanding in power switch modules, and it is suitable for scenarios that require fast switching, such as reverse protection circuits, overcurrent protection circuits, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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