Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
:**
- **Model**: ZXMN3B04N8TC-VB
- **Package**: SOP-8
- **Channel Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- RDS(ON) = 11mΩ (VGS = 4.5V)
- RDS(ON) = 8mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 13A
- **Technology**: Trench process
- **Maximum power dissipation**: The maximum tolerable power varies according to current and temperature conditions, typically several watts
- **Maximum operating temperature range**: -55°C to 150°C (normally room temperature to 125°C)
---
**
Domain and module applications:
:**
ZXMN3B04N8TC-VB MOSFET is widely used in the following fields due to its low RDS(ON) and high current capability:
1. **Power Management**:
- Suitable for use in switch mode power supplies (SMPS), DC-DC converters and battery management systems as an efficient switching element. Its low on-resistance can significantly reduce power consumption and improve system efficiency, especially under high frequency and high load conditions.
2. **Load Switch**:
- Used as a load switch in various electronic devices, especially for scenarios requiring high efficiency and low conduction loss. It can be widely used in computer power supplies, communication equipment, power tools and other fields.
3. **LED Drive Circuit**:
- Used as a switching element in LED drive circuits. Due to its low on-resistance and high current carrying capacity, it can ensure that the drive circuit remains efficient and stable under high load conditions.
4. **Automotive electronics**:
- In automotive power modules, the ZXMN3B04N8TC-VB can be used as a power switch for battery management systems and electronic control units (ECUs). The device has high temperature stability, making it ideal for the harsh environment of automotive electronics.
5. **Power amplifiers and low-voltage control circuits**:
- As a switching element in RF amplifiers, motor control, and other low-voltage control circuits, it provides fast response and low power loss to ensure high system efficiency.
These applications take full advantage of the excellent performance of the ZXMN3B04N8TC-VB MOSFET, ensuring that the system performs well in energy saving, space optimization, and long-term stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours