Featured Model

Last updated:

ZXMN20B28KTC-VB Product details

Product introduction:

Product Introduction

**ZXMN20B28KTC-VB** is a high-performance **N-channel MOSFET** in a **TO252 package**, designed for applications requiring **200V** drain-source voltage and **5A** maximum drain current. This MOSFET adopts **Trench technology** and has low **RDS(ON)** (850mΩ @ VGS = 10V), which can effectively reduce switching losses and improve system efficiency. Its **Vth** (gate threshold voltage) is **3V**, which is suitable for medium to high voltage applications. The high current carrying capacity, low on-resistance and high withstand voltage characteristics of ZXMN20B28KTC-VB make it an ideal choice for **power management, load switching, power conversion** and other fields.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 200V 3V 5A 850mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 200V 3V 5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 200V 3V 5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 850mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 5A
- **Input capacitance (Ciss)**: 1500pF @ VDS = 25V, VGS = 0V
- **Output capacitance (Coss)**: 150pF @ VDS = 25V, VGS = 0V
- **Reverse recovery time (trr)**: 70ns
- **Maximum power dissipation (Pd)**: 50W
- **Maximum operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Maximum current density**: 2A/mm²

Domain and module applications:

Applications and modules

1. **Power management and load switching**
ZXMN20B28KTC-VB is suitable for **power management systems**, especially in load switch applications that require high voltage and medium current. Its low on-resistance (**RDS(ON)**) effectively reduces power consumption and heat generation when current passes through, ensuring high efficiency and stability of the system. It is widely used in **DC-DC converters** and **AC power switches**.

2. **Electric vehicles and battery management systems**
In **electric vehicles** (EVs)** and **hybrid electric vehicles** (HEVs), ZXMN20B28KTC-VB can be used as the core switch element of the **battery management system**. It can efficiently carry large currents and control the current flow during battery charging and discharging, especially in high-voltage battery systems. It can provide stable performance.

3. **Power Conversion and Inverters**
This MOSFET is ideal for **inverter** and **power conversion** applications, especially high voltage systems such as **solar inverter** or **uninterruptible power supply (UPS)**. Its ability to withstand higher voltages (**200V**) makes it an ideal choice for high power conversion circuits, ensuring power supply stability and long system life.

4. **Industrial Power Systems**
In industrial equipment, the ZXMN20B28KTC-VB can be used in high power **power modules**, providing strong support for factory automation, industrial robots and various control systems. It can cope with high voltage and high current requirements and is a common power switching element in power control systems.

5. **Communication Equipment and RF Power**
In **communication equipment** and **RF power** (RF) modules, the ZXMN20B28KTC-VB can be used as an efficient switching element for power management to ensure efficient and stable signal transmission. In communication base stations, power amplifiers and other RF modules, it can provide the required high withstand voltage and low loss performance.

6. **Smart Home and Power Modules**
This MOSFET can be used in **smart home devices**, such as electric curtains, smart home appliances, etc., as the core switching element in the power module. It can withstand higher voltages at low power consumption, provide stable switching control, and adapt to the high-efficiency requirements of smart homes.

Summary

**ZXMN20B28KTC-VB** is an **N-channel MOSFET** with high voltage and high current carrying capacity, using **TO252 package**, suitable for **200V** power systems. Its low on-resistance (**RDS(ON)**) and high current carrying capacity make it perform well in **power management, electric vehicles, battery management systems** and **inverters**. Whether in industrial applications or consumer electronics, it can provide excellent performance and reliability, making it an ideal choice for efficient power conversion and power switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat