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ZXMN2088DE6TA-VB Product details
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1. **Product Introduction: ZXMN2088DE6TA-VB**
ZXMN2088DE6TA-VB is a bipolar N+N type MOSFET in SOT23-6 package, designed for low voltage and high efficiency switching applications. Its maximum drain-source voltage (VDS) is 20V and gate-source voltage (VGS) is ±12V. The gate-source threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, with excellent low turn-on voltage characteristics, which can respond quickly at low voltage. The on-resistance (RDS(ON)) is 28mΩ at VGS=2.5V, and drops to 22mΩ at VGS=4.5V, with good conductivity, which helps to improve switching efficiency. The maximum drain current (ID) is 6A, which can withstand medium power working conditions and is suitable for various power control, drive circuits and switching applications. Its Trench technology enables low on-resistance and high-speed switching characteristics, ensuring high efficiency in various low-power systems.
ZXMN2088DE6TA-VB is a bipolar N+N type MOSFET in SOT23-6 package, designed for low voltage and high efficiency switching applications. Its maximum drain-source voltage (VDS) is 20V and gate-source voltage (VGS) is ±12V. The gate-source threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, with excellent low turn-on voltage characteristics, which can respond quickly at low voltage. The on-resistance (RDS(ON)) is 28mΩ at VGS=2.5V, and drops to 22mΩ at VGS=4.5V, with good conductivity, which helps to improve switching efficiency. The maximum drain current (ID) is 6A, which can withstand medium power working conditions and is suitable for various power control, drive circuits and switching applications. Its Trench technology enables low on-resistance and high-speed switching characteristics, ensuring high efficiency in various low-power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. **Detailed parameter description: ZXMN2088DE6TA-VB**
- **Model**: ZXMN2088DE6TA-VB
- **Package**: SOT23-6
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Gate-source threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- When VGS = 2.5V: 28mΩ
- When VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6A
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Input capacitance (Cgs)**: 300pF (VGS=10V)
- **Output capacitance (Cds)**: 45pF (VDS=20V)
- **Gate-source voltage range**: ±12V
- **Maximum power consumption**: 40W (depending on actual working conditions)
- **Switching speed**: High-speed switching, suitable for high-frequency applications
- **Model**: ZXMN2088DE6TA-VB
- **Package**: SOT23-6
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Gate-source threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- When VGS = 2.5V: 28mΩ
- When VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6A
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Input capacitance (Cgs)**: 300pF (VGS=10V)
- **Output capacitance (Cds)**: 45pF (VDS=20V)
- **Gate-source voltage range**: ±12V
- **Maximum power consumption**: 40W (depending on actual working conditions)
- **Switching speed**: High-speed switching, suitable for high-frequency applications
Domain and module applications：
3. **Application fields and module examples**
ZXMN2088DE6TA-VB is very suitable for power management and switch control in various low-power systems due to its low on-resistance, high-speed switching capability and compact package. The following are some typical applications of this type of MOSFET in different fields and modules:
# **Power management and low power conversion**
- **DC-DC converter**: In DC-DC buck or boost converters, ZXMN2088DE6TA-VB can be used as a switching element to quickly switch current, and due to its low RDS(ON) characteristics, it can effectively reduce power loss and improve the conversion efficiency of the system. Suitable for power adapters, portable battery devices, etc.
- **Battery Management System (BMS)**: In the battery management system, ZXMN2088DE6TA-VB can effectively control the battery charging and discharging process and provide stable current switching function. It is especially suitable for battery management in low-power, portable devices, such as smartphones, laptops, wearable devices, etc.
Summary
ZXMN2088DE6TA-VB is a high-efficiency dual N-type MOSFET with low on-resistance and excellent switching characteristics. It is suitable for power management, motor drive, smart home, battery management, switching power supply and automotive electronics. It provides a high-efficiency, low-power solution and is particularly suitable for low-power applications such as small motors, LED drivers, mobile devices and portable battery management systems. Due to its high performance and small package, ZXMN2088DE6TA-VB is an indispensable component in many modern electronic devices.
ZXMN2088DE6TA-VB is very suitable for power management and switch control in various low-power systems due to its low on-resistance, high-speed switching capability and compact package. The following are some typical applications of this type of MOSFET in different fields and modules:
# **Power management and low power conversion**
- **DC-DC converter**: In DC-DC buck or boost converters, ZXMN2088DE6TA-VB can be used as a switching element to quickly switch current, and due to its low RDS(ON) characteristics, it can effectively reduce power loss and improve the conversion efficiency of the system. Suitable for power adapters, portable battery devices, etc.
- **Battery Management System (BMS)**: In the battery management system, ZXMN2088DE6TA-VB can effectively control the battery charging and discharging process and provide stable current switching function. It is especially suitable for battery management in low-power, portable devices, such as smartphones, laptops, wearable devices, etc.
Summary
ZXMN2088DE6TA-VB is a high-efficiency dual N-type MOSFET with low on-resistance and excellent switching characteristics. It is suitable for power management, motor drive, smart home, battery management, switching power supply and automotive electronics. It provides a high-efficiency, low-power solution and is particularly suitable for low-power applications such as small motors, LED drivers, mobile devices and portable battery management systems. Due to its high performance and small package, ZXMN2088DE6TA-VB is an indispensable component in many modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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