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ZXMN10B08E6TA-VB Product details
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ZXMN10B08E6TA-VB MOSFET Product Introduction
ZXMN10B08E6TA-VB is an N-channel MOSFET in a SOT23-6 package, suitable for low-power power management, switching regulation and electronic switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, which is suitable for electronic circuits in medium voltage environments. It has low on-resistance (RDS(ON)) and high drain current (ID) capability, which enables it to provide high efficiency and low power consumption while having good thermal management performance. The device uses Trench technology to show stable performance in high-efficiency power control and high-frequency switching applications.
ZXMN10B08E6TA-VB is a MOSFET that is very suitable for low-power switching power supplies, chargers, LED drivers and battery management systems in various consumer electronic products.
ZXMN10B08E6TA-VB is an N-channel MOSFET in a SOT23-6 package, suitable for low-power power management, switching regulation and electronic switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, which is suitable for electronic circuits in medium voltage environments. It has low on-resistance (RDS(ON)) and high drain current (ID) capability, which enables it to provide high efficiency and low power consumption while having good thermal management performance. The device uses Trench technology to show stable performance in high-efficiency power control and high-frequency switching applications.
ZXMN10B08E6TA-VB is a MOSFET that is very suitable for low-power switching power supplies, chargers, LED drivers and battery management systems in various consumer electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
ZXMN10B08E6TA-VB Detailed parameter description
| **Parameter** | **Description** |
|-------------------------|----------------------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Single N-type channel|
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 105mΩ @ VGS=4.5V, 95mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 3.2A |
| **Technology** | Trench |
**Main features:**
- **Withstand voltage**: The maximum drain-source voltage is 100V, which is suitable for medium voltage power management applications.
- **Low on-resistance**: At a gate-source voltage of 4.5V, the on-resistance is 105mΩ; at a gate-source voltage of 10V, the on-resistance is reduced to 95mΩ, which can effectively reduce conduction losses and improve work efficiency.
- **Higher drain current capability**: The maximum drain current is 3.2A, which is suitable for handling medium power loads.
- **High-efficiency Trench technology**: This MOSFET uses Trench technology to provide higher efficiency and better thermal management performance, suitable for high-frequency and high-efficiency applications.
| **Parameter** | **Description** |
|-------------------------|----------------------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Single N-type channel|
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 105mΩ @ VGS=4.5V, 95mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 3.2A |
| **Technology** | Trench |
**Main features:**
- **Withstand voltage**: The maximum drain-source voltage is 100V, which is suitable for medium voltage power management applications.
- **Low on-resistance**: At a gate-source voltage of 4.5V, the on-resistance is 105mΩ; at a gate-source voltage of 10V, the on-resistance is reduced to 95mΩ, which can effectively reduce conduction losses and improve work efficiency.
- **Higher drain current capability**: The maximum drain current is 3.2A, which is suitable for handling medium power loads.
- **High-efficiency Trench technology**: This MOSFET uses Trench technology to provide higher efficiency and better thermal management performance, suitable for high-frequency and high-efficiency applications.
Domain and module applications：
Application fields and modules of ZXMN10B08E6TA-VB
The characteristics of ZXMN10B08E6TA-VB make it very suitable for the following fields and modules:
1. **Switching Power Supply (SMPS)**
ZXMN10B08E6TA-VB is used as a switching element in the switching power supply (SMPS), which can achieve efficient voltage conversion and current regulation. It is especially suitable for medium voltage power supply modules such as AC-DC converters and DC-DC converters.
2. **LED Driver Power Supply**
In LED driver power supply modules, ZXMN10B08E6TA-VB can be used as a switching element in the dimming circuit. Due to its low on-resistance and high drain current capability, it can effectively control the current of the LED and improve the efficiency of the power supply.
3. **Battery Management System**
In the battery management system, this MOSFET can be used for battery charging control, current monitoring and battery protection. Its efficient switching characteristics and low conduction losses make it ideal for battery chargers and battery current regulation modules.
4. **Consumer Electronics**
ZXMN10B08E6TA-VB can be widely used in various consumer electronics products, such as power management modules for smartphones, portable devices, tablets and wearable devices. It can help achieve efficient battery power supply and charging systems.
5. **Automotive Electronics**
In automotive electronics, ZXMN10B08E6TA-VB can be used as a switching element for battery power management, DC-DC conversion, and power control systems, especially for battery charging management and power system energy conversion in electric vehicles.
6. **Power Tools and Home Appliances**
In power tools and home appliances, this MOSFET can be used as a low-voltage switch to control current flow, optimize power transmission and reduce energy loss. Especially in power modules for power tools, vacuum cleaners, electric motor drives and other household appliances, the ZXMN10B08E6TA-VB can provide reliable switching control.
Summary
ZXMN10B08E6TA-VB is a high-efficiency, low-power N-channel MOSFET in SOT23-6 package, suitable for a variety of low to medium power applications. Its low on-resistance, high drain current capability and Trench technology make it have a wide range of application potentials in switching power supplies, battery management, LED drivers and power tools. It provides high efficiency and can provide stable and reliable performance at higher operating voltages, making it an ideal choice for modern consumer electronics and power management systems.
The characteristics of ZXMN10B08E6TA-VB make it very suitable for the following fields and modules:
1. **Switching Power Supply (SMPS)**
ZXMN10B08E6TA-VB is used as a switching element in the switching power supply (SMPS), which can achieve efficient voltage conversion and current regulation. It is especially suitable for medium voltage power supply modules such as AC-DC converters and DC-DC converters.
2. **LED Driver Power Supply**
In LED driver power supply modules, ZXMN10B08E6TA-VB can be used as a switching element in the dimming circuit. Due to its low on-resistance and high drain current capability, it can effectively control the current of the LED and improve the efficiency of the power supply.
3. **Battery Management System**
In the battery management system, this MOSFET can be used for battery charging control, current monitoring and battery protection. Its efficient switching characteristics and low conduction losses make it ideal for battery chargers and battery current regulation modules.
4. **Consumer Electronics**
ZXMN10B08E6TA-VB can be widely used in various consumer electronics products, such as power management modules for smartphones, portable devices, tablets and wearable devices. It can help achieve efficient battery power supply and charging systems.
5. **Automotive Electronics**
In automotive electronics, ZXMN10B08E6TA-VB can be used as a switching element for battery power management, DC-DC conversion, and power control systems, especially for battery charging management and power system energy conversion in electric vehicles.
6. **Power Tools and Home Appliances**
In power tools and home appliances, this MOSFET can be used as a low-voltage switch to control current flow, optimize power transmission and reduce energy loss. Especially in power modules for power tools, vacuum cleaners, electric motor drives and other household appliances, the ZXMN10B08E6TA-VB can provide reliable switching control.
Summary
ZXMN10B08E6TA-VB is a high-efficiency, low-power N-channel MOSFET in SOT23-6 package, suitable for a variety of low to medium power applications. Its low on-resistance, high drain current capability and Trench technology make it have a wide range of application potentials in switching power supplies, battery management, LED drivers and power tools. It provides high efficiency and can provide stable and reliable performance at higher operating voltages, making it an ideal choice for modern consumer electronics and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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