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ZXMN10A25GTC-VB Product details

Product introduction:

1. Product Introduction (ZXMN10A25GTC-VB)

The ZXMN10A25GTC-VB is a high-performance N-channel MOSFET in a SOT223 package suitable for a variety of power management and power regulation applications. The MOSFET has a maximum drain-source voltage (V_DS) of 100V and a maximum drain current (I_D) of 5A, making it an excellent performer in circuits requiring high voltage and medium current. Its gate-source turn-on voltage (V_th) is 1.8V, enabling it to start at a lower gate voltage, and uses Trench technology to provide low on-resistance: 120mΩ at V_GS = 4.5V and 100mΩ at V_GS = 10V. This gives the ZXMN10A25GTC-VB excellent performance in high-efficiency switching applications and is widely used in power conversion, drive control, and power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 100V 1.8V 5A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 100V 1.8V 5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 100V 1.8V 5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
2. Detailed parameter description

- **Model**: ZXMN10A25GTC-VB
- **Package type**: SOT223
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate-source turn-on voltage (V_th)**: 1.8V
- **On-resistance (R_DS(on))**:
- @V_GS = 4.5V: 120mΩ
- @V_GS = 10V: 100mΩ
- **Maximum leakage current (I_D)**: 5A
- **Technology**: Trench technology
- **Maximum power dissipation (P_d)**: Suitable for power conversion applications
- **Operating temperature range**: Typically suitable for industrial temperature range (-55°C to +150°C)
- **Package size**: Suitable for compact applications and easy integration into a variety of circuit board designs

Domain and module applications:

3. Applicable fields and module application examples

ZXMN10A25GTC-VB is suitable for many fields with its high efficiency and low on-resistance characteristics, especially in power management and high-efficiency switch control.

# **1. Power converter (DC-DC converter)**
ZXMN10A25GTC-VB is suitable for DC-DC converters, especially in applications that require higher voltage (maximum 100V) and medium current (maximum 5A) load. Its low on-resistance characteristics can significantly reduce switching losses and improve conversion efficiency. In high-efficiency power supply design, it can provide stable and efficient power output and is widely used in communication power supply, industrial equipment power supply and other fields.
# ** Intelligent power supply and power management**
This MOSFET is also suitable for intelligent power management modules, such as high-efficiency power adapters, fast charging systems, etc. ZXMN10A25GTC-VB can operate in high current and high voltage environments and provide excellent power conversion efficiency, ensuring the stability and efficiency of the equipment under load changes.
Conclusion

ZXMN10A25GTC-VB MOSFET is suitable for various applications requiring high-efficiency power conversion and power management through its high voltage carrying capability, low on-resistance and high current handling capability. Whether it is power converters, battery management systems, power regulation of smart devices or power switches in industrial applications, they can all benefit from its excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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