中文
English
ZXMN10A11KTC-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**ZXMN10A11KTC-VB** is a **single N-channel MOSFET**, using **TO252** package, designed for **medium and high power switching applications** and **power management systems**. This product has excellent **on-resistance** and **high current carrying capacity**, which is very suitable for systems that require efficient power conversion and current switching. **ZXMN10A11KTC-VB** has a **VDS** (drain-source voltage) of **100V**, a maximum **ID** (drain current) of **15A**, and an **RDS(ON)** of **114mΩ** when **VGS=10V**, which effectively reduces switching losses and improves system efficiency.
This product uses **Trench technology** to achieve excellent switching performance in a small package. It is suitable for **DC-DC converters**, **power adapters**, **electric drives**, **load switches** and other applications, and can meet the needs of modern high-frequency power systems for high efficiency and low power consumption. This model has a **Vth** (threshold voltage) of **1.8V**, which can be enabled at a lower gate drive voltage, so it is widely used in low-voltage control systems.
**ZXMN10A11KTC-VB** is a **single N-channel MOSFET**, using **TO252** package, designed for **medium and high power switching applications** and **power management systems**. This product has excellent **on-resistance** and **high current carrying capacity**, which is very suitable for systems that require efficient power conversion and current switching. **ZXMN10A11KTC-VB** has a **VDS** (drain-source voltage) of **100V**, a maximum **ID** (drain current) of **15A**, and an **RDS(ON)** of **114mΩ** when **VGS=10V**, which effectively reduces switching losses and improves system efficiency.
This product uses **Trench technology** to achieve excellent switching performance in a small package. It is suitable for **DC-DC converters**, **power adapters**, **electric drives**, **load switches** and other applications, and can meet the needs of modern high-frequency power systems for high efficiency and low power consumption. This model has a **Vth** (threshold voltage) of **1.8V**, which can be enabled at a lower gate drive voltage, so it is widely used in low-voltage control systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- **114mΩ** @ **VGS=10V**
- **Maximum drain current (ID)**:
- **15A**
- **Power loss (P_D)**: 45W (typical, depending on operating conditions)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Thermal resistance (Junction to Case)**: 30°C/W
- **Maximum power dissipation**: 45W
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- **114mΩ** @ **VGS=10V**
- **Maximum drain current (ID)**:
- **15A**
- **Power loss (P_D)**: 45W (typical, depending on operating conditions)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Thermal resistance (Junction to Case)**: 30°C/W
- **Maximum power dissipation**: 45W
Domain and module applications：
Application fields and module examples
1. **Power management system**:
**ZXMN10A11KTC-VB** is suitable for **power management systems**, such as **DC-DC converters**, **voltage regulators**, **battery management systems**, etc. Due to its **low on-resistance** and **high current carrying capacity**, this MOSFET can reduce losses and improve efficiency during power conversion, ensuring voltage stability and smooth current output.
2. **Power adapter**:
In **power adapter**, **ZXMN10A11KTC-VB** can be used for efficient power conversion, switch control and current limiting, and is particularly suitable for **low power adapter** and **high efficiency charger**. Its **low on-resistance** and **high current capacity** make it an ideal switching element in power adapters, effectively improving the working efficiency and stability of the adapters.
3. **Electric Drive Systems**:
Due to the high current capability and low on-resistance of the **ZXMN10A11KTC-VB**, it performs well in **Electric Drive Systems**. This product is able to provide efficient power switching and is suitable for applications that require high power and high efficiency control, such as power tools, electric vehicle drives, **Robot drive systems**.
4. **Load Switch**:
**ZXMN10A11KTC-VB** is suitable for **Load Switch** applications, such as switch control in power management systems, **Smart Home**, **Industrial Automation** and other fields. The **low on-resistance** and **high current capability** of the MOSFET can ensure that the load switch works stably under low power consumption and high efficiency.
5. **Power Amplifier and Amplifier Circuits**:
In circuits that require high power transmission, such as **power amplifiers** or **RF amplifiers**, this MOSFET provides efficient switching performance, especially for applications that require high power conversion and precise control.
6. **High-efficiency switching power supply**:
**ZXMN10A11KTC-VB** is also very suitable for **switching power supply** applications, especially for **high-frequency switching power supply** and **PWM control power supply**. The low on-resistance of this MOSFET enables it to perform well under high-frequency operation, reducing switching loss and heat loss, and effectively improving system efficiency.
1. **Power management system**:
**ZXMN10A11KTC-VB** is suitable for **power management systems**, such as **DC-DC converters**, **voltage regulators**, **battery management systems**, etc. Due to its **low on-resistance** and **high current carrying capacity**, this MOSFET can reduce losses and improve efficiency during power conversion, ensuring voltage stability and smooth current output.
2. **Power adapter**:
In **power adapter**, **ZXMN10A11KTC-VB** can be used for efficient power conversion, switch control and current limiting, and is particularly suitable for **low power adapter** and **high efficiency charger**. Its **low on-resistance** and **high current capacity** make it an ideal switching element in power adapters, effectively improving the working efficiency and stability of the adapters.
3. **Electric Drive Systems**:
Due to the high current capability and low on-resistance of the **ZXMN10A11KTC-VB**, it performs well in **Electric Drive Systems**. This product is able to provide efficient power switching and is suitable for applications that require high power and high efficiency control, such as power tools, electric vehicle drives, **Robot drive systems**.
4. **Load Switch**:
**ZXMN10A11KTC-VB** is suitable for **Load Switch** applications, such as switch control in power management systems, **Smart Home**, **Industrial Automation** and other fields. The **low on-resistance** and **high current capability** of the MOSFET can ensure that the load switch works stably under low power consumption and high efficiency.
5. **Power Amplifier and Amplifier Circuits**:
In circuits that require high power transmission, such as **power amplifiers** or **RF amplifiers**, this MOSFET provides efficient switching performance, especially for applications that require high power conversion and precise control.
6. **High-efficiency switching power supply**:
**ZXMN10A11KTC-VB** is also very suitable for **switching power supply** applications, especially for **high-frequency switching power supply** and **PWM control power supply**. The low on-resistance of this MOSFET enables it to perform well under high-frequency operation, reducing switching loss and heat loss, and effectively improving system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
