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ZVN4525E6TA-VB Product details

Product introduction:

1. Product Introduction (ZVN4525E6TA-VB)

The ZVN4525E6TA-VB is a high-performance N-channel MOSFET in a SOT23-6 package, designed for high-voltage power management and switch control applications. The device has a high drain-source voltage (V_DS) of 200V, can withstand a maximum drain current (I_D) of 4A, and provides a low on-resistance (R_DS(on)). Utilizing Trench technology, the ZVN4525E6TA-VB maintains low power consumption while ensuring high efficiency, and is suitable for multiple medium and high voltage power and switching applications.

The gate-source turn-on voltage (V_th) of this MOSFET is 3V, which is suitable for applications requiring high stability. With its high switching speed and low on-resistance, the ZVN4525E6TA-VB is able to provide stable and reliable performance under high-frequency operating conditions. Whether in battery management, power tools or power conversion, the ZVN4525E6TA-VB meets the high-efficiency, high-voltage needs of modern electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-N 200V 3V 4A 160mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-N 200V 3V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-N 200V 3V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-N
2. Detailed parameter description

- **Model**: ZVN4525E6TA-VB
- **Package type**: SOT23-6
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 200V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate-source turn-on voltage (V_th)**: 3V
- **On-resistance (R_DS(on))**:
- 200mΩ @ V_GS = 4.5V
- 160mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 4A
- **Technology**: Trench technology
- **Operating temperature range**: Typically suitable for industrial temperature range

Domain and module applications:

3. Application fields and module application examples

As a medium-high voltage N-channel MOSFET, ZVN4525E6TA-VB has high drain-source voltage and low on-resistance, which is suitable for multiple high-efficiency power management and switch regulation applications. The following are its typical application fields:

- **High voltage power converter**: The high drain-source voltage (200V) of ZVN4525E6TA-VB makes it particularly suitable for switch control in high voltage power modules, especially in AC-DC converters or DC-DC converters, which can improve the switching efficiency and stability of the system.
- **Power tools and battery management systems**: In power tools or battery management systems, ZVN4525E6TA-VB provides high voltage tolerance and low on-resistance to help achieve efficient power conversion and battery charge and discharge management.
- **Solar inverter**: This MOSFET performs well in solar inverters and is suitable for converting DC power to AC power, improving system efficiency and extending equipment life by optimizing switch control.
- **Power Control Systems**: ZVN4525E6TA-VB can be widely used in power control systems, especially in areas where high switching frequency and stability are required, such as voltage regulation, load switching and current limiting.
- **Automotive Electronics**: In automotive electronics applications, especially in the power management systems of electric and hybrid vehicles, ZVN4525E6TA-VB provides stable high-voltage switching control, optimizes energy management and reduces system power consumption.

ZVN4525E6TA-VB is a versatile, high-efficiency MOSFET that is ideal for applications that require high voltage and high switching speed, such as efficient power management, power tools, solar equipment and automotive electronics. Multiple modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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