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ZVN4424GTC-VB Product details
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Product Introduction
**ZVN4424GTC-VB** is a **single N-channel MOSFET** in a **SOT223** package, suitable for higher voltage switch control and power management applications. Its maximum drain-source voltage (**VDS**) can reach **250V**, making it suitable for use in medium and high voltage environments. The **RDS(ON)** of this MOSFET is **2000mΩ** (@ VGS=10V), which is suitable for low power consumption and relatively loose on-resistance requirements. Its maximum drain current (**ID**) is **0.79A**, which can effectively control and drive low current loads.
**ZVN4424GTC-VB** has a **Vth** (turn-on voltage) of **3V**, which has a high sensitivity to switch control and is suitable for **automatic control systems** and **signal processing** and other occasions. Combined with **Trench technology**, this MOSFET has lower switching losses and better stability during switching, and can provide reliable operating performance in the medium current and voltage range.
**ZVN4424GTC-VB** is a **single N-channel MOSFET** in a **SOT223** package, suitable for higher voltage switch control and power management applications. Its maximum drain-source voltage (**VDS**) can reach **250V**, making it suitable for use in medium and high voltage environments. The **RDS(ON)** of this MOSFET is **2000mΩ** (@ VGS=10V), which is suitable for low power consumption and relatively loose on-resistance requirements. Its maximum drain current (**ID**) is **0.79A**, which can effectively control and drive low current loads.
**ZVN4424GTC-VB** has a **Vth** (turn-on voltage) of **3V**, which has a high sensitivity to switch control and is suitable for **automatic control systems** and **signal processing** and other occasions. Combined with **Trench technology**, this MOSFET has lower switching losses and better stability during switching, and can provide reliable operating performance in the medium current and voltage range.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.79A
- **Maximum power loss (P_D)**: 2W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Thermal resistance (Junction to Case)**: 50°C/W
- **Application areas**:
- Battery management
- Switching power supply
- Current control
- Drive circuit
- Signal processing
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.79A
- **Maximum power loss (P_D)**: 2W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Thermal resistance (Junction to Case)**: 50°C/W
- **Application areas**:
- Battery management
- Switching power supply
- Current control
- Drive circuit
- Signal processing
Domain and module applications：
Application fields and module examples: 1. Battery Management System (BMS): In the battery management system, ZVN4424GTC-VB is suitable for medium voltage battery protection circuits and battery charge and discharge control. The VDS of this MOSFET is suitable for the protection and current management of 12V and 24V battery packs, ensuring that the battery can be protected under overcurrent or overvoltage conditions to prevent battery damage. 2. Switching Power Supply (SMPS): In switching power supplies, especially low-power switching power supplies, ZVN4424GTC-VB can be used as a switching element. Although its maximum current is 0.79A, it has reliable switching performance and can effectively perform power conversion in medium voltage applications (such as low-power adapters and battery chargers).
3. **Current control applications**:
Since **ZVN4424GTC-VB** has a low **RDS(ON)** value, it is suitable for circuits that require current control. For example, in **relay drive**, **motor control** or other low-power switching circuits, it can be used as a power switching element to provide precise current control and efficient switching operation.
4. **Drive circuit**:
As a low-power MOSFET, **ZVN4424GTC-VB** can perform excellent control performance in drive circuits, especially in **small electronic products** (such as **sensor drive** or **load switch**). Due to its low **Vth**, it can be turned on at a low gate voltage, which is suitable for applications that require low voltage drive.
5. **Signal processing and low-power amplifier circuits**:
In some low-power **signal processing circuits** or **amplifier circuits**, **ZVN4424GTC-VB** can be used as a switching device or gain control. Its high voltage tolerance makes it suitable for signal conditioning and switching operations.
In summary, **ZVN4424GTC-VB** is suitable for **battery management systems**, **low-power switching power supplies**, **current control applications**, **drive circuits**, and **signal processing circuits**. Through its high **VDS**, moderate **RDS(ON)**, and reliable switching characteristics, this MOSFET provides solutions for a variety of power management and control applications.
3. **Current control applications**:
Since **ZVN4424GTC-VB** has a low **RDS(ON)** value, it is suitable for circuits that require current control. For example, in **relay drive**, **motor control** or other low-power switching circuits, it can be used as a power switching element to provide precise current control and efficient switching operation.
4. **Drive circuit**:
As a low-power MOSFET, **ZVN4424GTC-VB** can perform excellent control performance in drive circuits, especially in **small electronic products** (such as **sensor drive** or **load switch**). Due to its low **Vth**, it can be turned on at a low gate voltage, which is suitable for applications that require low voltage drive.
5. **Signal processing and low-power amplifier circuits**:
In some low-power **signal processing circuits** or **amplifier circuits**, **ZVN4424GTC-VB** can be used as a switching device or gain control. Its high voltage tolerance makes it suitable for signal conditioning and switching operations.
In summary, **ZVN4424GTC-VB** is suitable for **battery management systems**, **low-power switching power supplies**, **current control applications**, **drive circuits**, and **signal processing circuits**. Through its high **VDS**, moderate **RDS(ON)**, and reliable switching characteristics, this MOSFET provides solutions for a variety of power management and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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