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ZVN4210GTC-VB Product details

Product introduction:

Product Introduction

**ZVN4210GTC-VB** is a **single N-channel MOSFET** in a **SOT223** package, suitable for efficient power switching and low-power applications. Its **VDS** maximum withstand voltage is **100V**, and it has good performance in power management and signal control applications where the voltage requirement does not exceed **100V**. The **RDS(ON)** value of this MOSFET is **120mΩ** (@ VGS=4.5V) and **100mΩ** (@ VGS=10V), providing lower on-resistance, thereby reducing the heat generated during the switching process and improving overall efficiency. **ZVN4210GTC-VB** has a maximum drain current (**ID**) of **5A**, making it suitable for low and medium power current control applications.

Using **Trench technology**, this MOSFET performs well in switching speed, stability and low energy consumption. It is particularly suitable for switching power supplies, DC-DC converters, drive circuits and load control. It is widely used in consumer electronics, automotive electronics and industrial automation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 100V 1.8V 5A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 100V 1.8V 5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 100V 1.8V 5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
Detailed parameter description

- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Maximum power loss (P_D)**: 25W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Thermal resistance (Junction to Case)**: 50°C/W
- **Application areas**:
- Switching power supply (SMPS)
- Battery management system
- Automatic control system
- DC-DC converter
- Drive circuit

Domain and module applications:

Applications and module examples

1. **Switching Power Supply (SMPS)**:
Due to its maximum drain-source voltage of **100V**, **ZVN4210GTC-VB** is suitable for medium voltage switching power supply (SMPS) design. It can be used as the main switching element in **DC-DC converters**, **adapters** and **chargers**. In **power management systems**, this MOSFET provides low on-resistance and efficient switching performance, which helps reduce switching losses and improve conversion efficiency.

2. **Battery Management System (BMS)**:
In **battery management systems (BMS)**, ZVN4210GTC-VB can be used in **battery protection circuits** and **battery charging control circuits**. The **low RDS(ON)** characteristics of this MOSFET enable it to efficiently manage the battery charging and discharging process, especially for **lithium batteries** or **NiMH batteries** protection, extending battery life.

3. **DC-DC Converter**:
The high **VDS** (100V) and moderate **ID** (5A) of ZVN4210GTC-VB make it very suitable for use in **DC-DC Converter**. Its low on-resistance can effectively reduce losses and improve power conversion efficiency, especially for applications with **load current not exceeding 5A**, such as **automotive power modules**, **industrial power supplies** and **high-efficiency power adapters**.

4. **Drive Circuit and Switch Control**:
This MOSFET can be used as the core component of **switch drive circuit** and is widely used in **motor control**, **relay drive** or other low-power switch control systems. Its reliability and high efficiency make it an indispensable component in automotive electronics, industrial automation and consumer electronics.

In summary, **ZVN4210GTC-VB** is suitable for **switching power supply**, **battery management system**, **DC-DC converter** and **drive circuits and other fields**. Through its low on-resistance, efficient switching performance and moderate current carrying capacity, this MOSFET provides an efficient, economical and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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