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ZVN4206GVTA-VB Product details
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Product Introduction
**ZVN4206GVTA-VB** is a **single N-channel MOSFET** in a **SOT223 package**, designed for applications requiring higher current and good conductivity. Its **VDS** (drain-source voltage) is **60V**, which can support medium voltage applications. The **gate-source threshold voltage (Vth)** of this MOSFET is **1.7V**, which has a low turn-on voltage and is suitable for low-voltage control circuits. Its **on-resistance (RDS(ON))** is **85mΩ** (at **VGS=4.5V**) and **76mΩ** (at **VGS=10V**), respectively, providing lower power loss. **The **maximum drain current (ID)** of **ZVN4206GVTA-VB** is **4.5A**, which is suitable for operation under medium current loads. Using **Trench technology**, this MOSFET provides lower switching losses and better thermal performance, suitable for multiple high-efficiency applications.
**ZVN4206GVTA-VB** is a **single N-channel MOSFET** in a **SOT223 package**, designed for applications requiring higher current and good conductivity. Its **VDS** (drain-source voltage) is **60V**, which can support medium voltage applications. The **gate-source threshold voltage (Vth)** of this MOSFET is **1.7V**, which has a low turn-on voltage and is suitable for low-voltage control circuits. Its **on-resistance (RDS(ON))** is **85mΩ** (at **VGS=4.5V**) and **76mΩ** (at **VGS=10V**), respectively, providing lower power loss. **The **maximum drain current (ID)** of **ZVN4206GVTA-VB** is **4.5A**, which is suitable for operation under medium current loads. Using **Trench technology**, this MOSFET provides lower switching losses and better thermal performance, suitable for multiple high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Drain current (ID)**: 4.5A
- **Maximum power dissipation (Pd)**: Max 1W
- **Input capacitance (Ciss)**: 450pF @ VDS=25V, VGS=0V
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Maximum current density**: 0.45A/mm²
- **Maximum current saturation value**: 4.5A
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Drain current (ID)**: 4.5A
- **Maximum power dissipation (Pd)**: Max 1W
- **Input capacitance (Ciss)**: 450pF @ VDS=25V, VGS=0V
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Maximum current density**: 0.45A/mm²
- **Maximum current saturation value**: 4.5A
Domain and module applications：
Applications and modules
1. **DC-DC converter and power management**
Due to its low **RDS(ON)** and high **ID**, the **ZVN4206GVTA-VB** is very suitable for use in **DC-DC converters**. This MOSFET can handle current efficiently and is suitable for **buck converters, boost converters, Buck/Boost power management modules**, etc., helping to reduce power losses and improve overall energy efficiency.
2. **Battery-powered systems and battery management**
In **battery-powered systems**, especially **lithium battery management** or **battery protection circuits**, the **ZVN4206GVTA-VB** can provide efficient switch control to ensure current stability and thermal management of the battery during charging and discharging. In addition, it is also suitable for **battery balancing modules, charging protection circuits**, etc.
3. **Low-power switching circuits**
The **low gate-source threshold voltage** (1.7V) of this MOSFET makes it suitable for **low-power switching circuits**. In **wireless sensor networks, smart home devices, battery-driven embedded systems**, it can operate efficiently under low voltage conditions, reduce energy consumption and extend the operating time of the device.
4. **Power management of audio and video equipment**
**ZVN4206GVTA-VB** can be widely used in **power management of audio and video equipment**, such as power switch control for audio amplifiers. Its low on-resistance and good thermal management performance ensure that the device can operate stably even under high load conditions.
5. **Automotive electronics and power tools**
In **automotive electronic systems** or **power tools**, **ZVN4206GVTA-VB** can be used in battery-powered systems, especially for current switching or voltage conversion applications. This MOSFET can handle large current loads while providing efficient current regulation, helping to improve the operating efficiency of automotive electrical systems or power tools.
6. **LED drive circuit**
Due to its efficient switching characteristics, **ZVN4206GVTA-VB** is suitable for **LED drive circuits**, especially LED lighting systems that require precise current control and efficient switching. The efficient conduction and low loss characteristics of this MOSFET can achieve precise control of LEDs and extend the service life of LEDs.
**ZVN4206GVTA-VB** is a **single N-channel MOSFET** suitable for efficient power management, suitable for **DC-DC converters, battery management, low-power switching circuits, audio and video equipment power management, automotive electronics, LED drivers and other fields**. Its **low on-resistance** and **high current carrying capacity** make it an ideal choice for a variety of medium-power applications.
1. **DC-DC converter and power management**
Due to its low **RDS(ON)** and high **ID**, the **ZVN4206GVTA-VB** is very suitable for use in **DC-DC converters**. This MOSFET can handle current efficiently and is suitable for **buck converters, boost converters, Buck/Boost power management modules**, etc., helping to reduce power losses and improve overall energy efficiency.
2. **Battery-powered systems and battery management**
In **battery-powered systems**, especially **lithium battery management** or **battery protection circuits**, the **ZVN4206GVTA-VB** can provide efficient switch control to ensure current stability and thermal management of the battery during charging and discharging. In addition, it is also suitable for **battery balancing modules, charging protection circuits**, etc.
3. **Low-power switching circuits**
The **low gate-source threshold voltage** (1.7V) of this MOSFET makes it suitable for **low-power switching circuits**. In **wireless sensor networks, smart home devices, battery-driven embedded systems**, it can operate efficiently under low voltage conditions, reduce energy consumption and extend the operating time of the device.
4. **Power management of audio and video equipment**
**ZVN4206GVTA-VB** can be widely used in **power management of audio and video equipment**, such as power switch control for audio amplifiers. Its low on-resistance and good thermal management performance ensure that the device can operate stably even under high load conditions.
5. **Automotive electronics and power tools**
In **automotive electronic systems** or **power tools**, **ZVN4206GVTA-VB** can be used in battery-powered systems, especially for current switching or voltage conversion applications. This MOSFET can handle large current loads while providing efficient current regulation, helping to improve the operating efficiency of automotive electrical systems or power tools.
6. **LED drive circuit**
Due to its efficient switching characteristics, **ZVN4206GVTA-VB** is suitable for **LED drive circuits**, especially LED lighting systems that require precise current control and efficient switching. The efficient conduction and low loss characteristics of this MOSFET can achieve precise control of LEDs and extend the service life of LEDs.
**ZVN4206GVTA-VB** is a **single N-channel MOSFET** suitable for efficient power management, suitable for **DC-DC converters, battery management, low-power switching circuits, audio and video equipment power management, automotive electronics, LED drivers and other fields**. Its **low on-resistance** and **high current carrying capacity** make it an ideal choice for a variety of medium-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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